SDB65N03 datasheet(2/5 Pages) SAMHOP

Part #	SDB65N03

Description	N-Channel Logic Level E nhancement Mode Field E ffect Transistor

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Manufacturer	SAMHOP [SamHop Microelectronics Corp.]

Direct Link	http://www.samhop.com.tw

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E LE CTR ICAL CHAR ACTE R IS TICS (TC 25 C unless otherwise noted)

=

Parameter

Symbol

Condition

Min Typ Max Unit

OFF CHAR ACTER ISTICS

Drain-Source Breakdown Voltage

BVDSS

=

VGS 0V, ID 250uA

=

30

V

Zero Gate Voltage Drain Current

IDSS

VDS 24V, VGS 0V

=

10

uA

Gate-Body Leakage

IGSS

VGS 20V, VDS 0V

=

100 nA

ON CHAR ACTER ISTICS a

Gate Threshold Voltage

VGS(th)

VDS VGS, ID = 250uA

=

1

1.5

3

V

Drain-Source On-State R esistance

R DS(ON)

VGS = 10V, ID = 26A

8

9

VGS = 4.5V, ID = 21A

15

On-State Drain Current

ID(ON)

VDS = 10V, VGS = 10V

65

38

A

S

Forward Transconductance

FS

g

VDS = 10V, ID = 26A

DYNAMIC CHAR ACTER ISTICS

b

Input Capacitance

CISS

CRSS

COSS

Output Capacitance

R everse Transfer Capacitance

VDS =15V, VGS = 0V

f =1.0MHZ

1350

P

F

625

P

F

P

F

190

SWITCHING CHAR ACTER ISTICS

b

Turn-On Delay Time

R ise Time

Turn-Off Delay Time

tD(ON)

tr

tD(OFF)

tf

VDD = 15V,

ID = 1A,

VGS = 10V

R GEN = 6

ns

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

Qg

Qgs

Qgd

VDS =10V, ID = 65A,

VGS =10V

nC

C

30

Fall Time

4

41

6.9

5.8

2

12

S DP /B 65N03L

32

132

30

m ohm

ohm

50

nC

VDS =10V, ID =65A,VGS =10V

VDS =10V, ID =65A,VGS =4.5V

20.5 24.5

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