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SKA06N60 Datasheet(PDF) 7 Page - Infineon Technologies AG

Part # SKA06N60
Description  Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode
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Manufacturer  INFINEON [Infineon Technologies AG]
Direct Link  http://www.infineon.com
Logo INFINEON - Infineon Technologies AG

SKA06N60 Datasheet(HTML) 7 Page - Infineon Technologies AG

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SKP06N60,
SKB06N60
SKA06N60
7Jul-02
0A
3A
6A
9A
12A
15A
0.0m J
0.2m J
0.4m J
0.6m J
0.8m J
E
on*
E
off
E
ts*
0
Ω
50
Ω
100
Ω
150
Ω
0.0m J
0.2m J
0.4m J
0.6m J
E
ts*
E
on*
E
off
IC, COLLECTOR CURRENT
RG, GATE RESISTOR
Figure 13. Typical switching energy losses
as a function of collector current
(inductive load, Tj = 150
°C, V
CE = 400V,
VGE = 0/+15V, RG = 50
Ω,
Dynamic test circuit in Figure E)
Figure 14. Typical switching energy losses
as a function of gate resistor
(inductive load, Tj = 150
°C, V
CE = 400V,
VGE = 0/+15V, IC = 6A,
Dynamic test circuit in Figure E)
0°C
50°C
100°C
150°C
0.0m J
0.1m J
0.2m J
0.3m J
0.4m J
E
ts*
E
on*
E
off
Tj, JUNCTION TEMPERATURE
Figure 15. Typical switching energy losses
as a function of junction temperature
(inductive load, VCE = 400V, VGE = 0/+15V,
IC = 6A, RG = 50
Ω,
Dynamic test circuit in Figure E)
*) Eon and Ets include losses
due to diode recovery.
*) Eon and Ets include losses
due to diode recovery.
*) Eon and Ets include losses
due to diode recovery.


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