SKW20N60 datasheet(7/13 Pages) INFINEON

Part #	SKW20N60

Description	Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode

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Manufacturer	INFINEON [Infineon Technologies AG]

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7 / 13 page

SKW20N60

7

Mar-00

0A

10A

20A

30A

40A

50A

0.0mJ

0.5mJ

1.0mJ

1.5mJ

2.0mJ

2.5mJ

3.0mJ

E

on*

E

off

E

ts*

0

Ω

10

Ω

20

Ω

30

Ω

40

Ω

50

Ω

60

Ω

0.0mJ

0.5mJ

1.0mJ

1.5mJ

2.0mJ

2.5mJ

3.0mJ

E

ts*

E

on*

E

off

IC, COLLECTOR CURRENT

RG, GATE RESISTOR

Figure 13. Typical switching energy losses

as a function of collector current

(inductive load, Tj = 150

°C, V

CE = 400V,

VGE = 0/+15V, RG = 16

Ω)

Figure 14. Typical switching energy losses

as a function of gate resistor

(inductive load, Tj = 150

°C, V

CE = 400V,

VGE = 0/+15V, IC = 20A)

0°C

50°C

100°C

150°C

0.0mJ

0.2mJ

0.4mJ

0.6mJ

0.8mJ

1.0mJ

1.2mJ

1.4mJ

1.6mJ

E

ts*

E

on*

E

off

1µs

10µs

100µs

1ms

10ms 100ms

1s

10

-4K/W

10

-3K/W

10

-2K/W

10

-1K/W

10

0K/W

0.01

0.02

0.05

0.1

0.2

single pulse

D=0.5

Tj, JUNCTION TEMPERATURE

tp, PULSE WIDTH

Figure 15. Typical switching energy losses

as a function of junction temperature

(inductive load, VCE = 400V, VGE = 0/+15V,

IC = 20A, RG = 1 6

Ω)

Figure 16. IGBT transient thermal

impedance as a function of pulse width

(D = tp / T)

*) Eon and Ets include losses

due to diode recovery.

*) Eon and Ets include losses

due to diode recovery.

*) Eon and Ets include losses

due to diode recovery.

C 1 = τ 1 / R 1

R 1

R 2

C 2 = τ 2 / R 2

R ,(1 / W )

τ , (s ) =

0.1882

0.1137

0.3214

2.24*10

-2

0.1512

7.86*10

-4

0.0392

9.41*10

-5

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SKW20N60 Datasheet(PDF) 7 Page - Infineon Technologies AG

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