© Semiconductor Components Industries, LLC, 2003

March, 2003 - Rev. 2

1

Publication Order Number:

BC858CDXV6T1/D

BC858CDXV6T1,

BC858CDXV6T5

Dual General Purpose

Transistor

PNP Dual

This transistor is designed for general purpose amplifier

applications. It is housed in the SOT-563 which is designed for low

power surface mount applications.

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Collector - Emitter Voltage

-30

V

Collector - Base Voltage

-30

V

Emitter - Base Voltage

-5.0

V

Collector Current -

Continuous

-100

mAdc

THERMAL CHARACTERISTICS

Characteristic

(One Junction Heated)

Symbol

Max

Unit

Total Device Dissipation

Derate above 25

°C

357

(Note 1)

2.9

(Note 1)

mW

mW/

°C

Thermal Resistance

Junction-to-

Ambient

350

(Note 1)

°C/W

Characteristic

(Both Junctions Heated)

Symbol

Max

Unit

Total Device Dissipation

Derate above 25

°C

500

(Note 1)

4.0

(Note 1)

mW

mW/

°C

Thermal Resistance Junction-to-Am-

bient

250

(Note 1)

°C/W

Junction and Storage

Temperature Range

- 55 to +150

°C

1. FR-4 @ Minimum Pad

SOT-563

CASE 463A

PLASTIC

1

2

3

6

5 4

(1)

(2)

(3)

(4)

(5)

(6)

http://onsemi.com

3L = Specific Device Code

D

= Date Code

MARKING DIAGRAM

3L D

Device

Package

Shipping

ORDERING INFORMATION

BC858CDXV6T1

SOT-563

4 mm pitch

4000/Tape & Reel

BC858CDXV6T5

SOT-563

2 mm pitch

8000/Tape & Reel