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CR02AM Datasheet(PDF) 1 Page - Mitsubishi Electric Semiconductor |
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CR02AM Datasheet(HTML) 1 Page - Mitsubishi Electric Semiconductor |
1 / 5 page Sep.2000 TYPE NAME VOLTAGE CLASS φ5.0 MAX 4.4 1.25 1.25 CIRCUMSCRIBE CIRCLE φ0.7 1 3 2 OUTLINE DRAWING Dimensions in mm JEDEC : TO-92 2 1 3 1 2 3 CATHODE ANODE GATE MITSUBISHI SEMICONDUCTOR 〈THYRISTOR〉 CR02AM LOW POWER USE PLANAR PASSIVATION TYPE CR02AM APPLICATION Solid state relay, leakage protector, fire alarm, timer, ringcounter, electric blankets, strobe flasher, other general purpose control applications Symbol VRRM VRSM VR (DC) VDRM VD (DC) Parameter Repetitive peak reverse voltage Non-repetitive peak reverse voltage DC reverse voltage Repetitive peak off-state voltage V1 DC off-state voltage V1 Voltage class Unit V V V V V MAXIMUM RATINGS 4 200 300 160 200 160 6 300 400 240 300 240 •IT (AV) ........................................................................ 0.3A •VDRM .................................................... 200V/300V/400V •IGT ......................................................................... 100 µA Symbol IT (RMS) IT (AV) ITSM I2t PGM PG (AV) VFGM VRGM IFGM Tj Tstg — Parameter RMS on-state current Average on-state current Surge on-state current I2t for fusing Peak gate power dissipation Average gate power dissipation Peak gate forward voltage Peak gate reverse voltage Peak gate forward current Junction temperature Storage temperature Weight Conditions Commercial frequency, sine half wave, 180 ° conduction, Ta=30°C 60Hz sine half wave 1 full cycle, peak value, non-repetitive Value corresponding to 1 cycle of half wave 60Hz, surge on-state current Typical value Unit A A A A2s W W V V A °C °C g Ratings 0.47 0.3 10 0.4 0.1 0.01 6 6 0.1 –40 ~ +125 –40 ~ +125 0.23 V1. With Gate-to-cathode resistance RGK=1k Ω 8 400 500 320 400 320 |
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