IRF830A datasheet(1/8 Pages) IRF

Part #	IRF830A

Description	HEXFET Power MOSFET

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Manufacturer	IRF [International Rectifier]

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IRF830A

SMPS MOSFET

HEXFET® Power MOSFET

l Switch Mode Power Supply ( SMPS )

l Uninterruptable Power Supply

l High speed power switching

Benefits

Applications

l Low Gate Charge Qg results in Simple

Drive Requirement

l Improved Gate, Avalanche and dynamic

dv/dt Ruggedness

l Fully Characterized Capacitance and

Avalanche Voltage and Current

l Effective Coss specified ( See AN 1001)

VDSS

Rds(on) max

ID

500V

1.40

Ω

5.0A

Typical SMPS Topologies:

l Two transistor Forward

l Half Bridge and Full Bridge

Parameter

Max.

Units

ID @ TC = 25°C

Continuous Drain Current, VGS @ 10V

5.0

ID @ TC = 100°C

Continuous Drain Current, VGS @ 10V

3.2

A

IDM

Pulsed Drain Current

20

PD @TC = 25°C

Power Dissipation

74

W

Linear Derating Factor

0.59

W/°C

VGS

Gate-to-Source Voltage

± 30

V

dv/dt

Peak Diode Recovery dv/dt

5.3

V/ns

TJ

Operating Junction and

-55 to + 150

TSTG

Storage Temperature Range

Soldering Temperature, for 10 seconds

300 (1.6mm from case )

°C

Mounting torqe, 6-32 or M3 screw

10 lbf•in (1.1N•m)

Absolute Maximum Ratings

TO-220AB

S

D

G

PD- 91878C

Notes

through are on page 8

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