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NGA-486 Datasheet(PDF) 1 Page - Stanford Microdevices |
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NGA-486 Datasheet(HTML) 1 Page - Stanford Microdevices |
1 / 4 page The information provided herein is believed to be reliable at press time. Stanford Microdevices assumes no responsibility for inaccuracies or omissions. Stanford Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the users own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Stanford Microdevices does not authorize or warrant any Stanford Microdevices product for use in life-support devices and/or systems. Copyright 2000 Stanford Microdevices, Inc. All worldwide rights reserved. 1 Product Description EDS-101104 Rev. D Phone: (800) SMI-MMIC http://www.stanfordmicro.com 726 Palomar Ave., Sunnyvale, CA 94085 NGA-486 DC-5 GHz, Cascadable InGaP/GaAs HBT MMIC Amplifier Product Features High Gain : 14.1 dB at 1950 MHz Cascadable 50 Ohm Patented InGaP Technology Operates From Single Supply Low Thermal Resistance Package Stanford Microdevices NGA-486 is a high performance InGaP/ GaAs Heterojunction Bipolar Transistor MMIC Amplifier. A Darlington configuration designed with InGaP process technology provides broadband performance up to 5 GHz with excellent thermal perfomance. The heterojunction increases breakdown voltage and minimizes leakage current between junctions. Cancellation of emitter junction non-linearities results in higher suppression of intermodulation products. At 850 Mhz and 80mA , the NGA-486 typically provides +39.5 dBm output IP3, 14.8 dB of gain, and +19 dBm of 1dB compressed power using a single positive voltage supply. Only 2 DC-blocking capacitors, a bias resistor and an optional RF choke are required for operation. l o b m y S r e t e m a r a P s ti n U y c n e u q e r F . n i M . p y T . x a M Gn i a G l a n g i S ll a m S B d B d B d z H M 0 5 8 z H M 0 5 9 1 z H M 0 0 4 2 3 . 3 18 . 4 1 1 . 4 1 5 . 3 1 3 . 6 1 P B d 1 n o i s s e r p m o C B d 1 t a r e w o P t u p t u O m B d m B d z H M 0 5 8 z H M 0 5 9 1 0 . 9 1 2 . 8 1 P I O 3 t n i o P t p e c r e t n I r e d r O d ri h T t u p t u O ) m B d 0 = e n o t r e p t u o r e w o P ( m B d m B d z H M 0 5 8 z H M 0 5 9 1 5 . 9 3 0 . 4 3 h t d i w d n a B ) B d 0 1 - < ( s s o L n r u t e R y b d e n i m r e t e Dz H M0 0 0 5 L R Is s o L n r u t e R t u p n IB dz H M 0 5 9 15 . 4 1 L R Os s o L n r u t e R t u p t u OB dz H M 0 5 9 15 . 5 1 F Ne r u g i F e s i o NB dz H M 0 5 9 10 . 4 V D e g a tl o V e c i v e DV 5 . 48 . 42 . 5 R h T e c n a t s i s e R l a m r e h TW / C °5 4 1 Test Conditions: V S = 8 V I D = 80 mA Typ. OIP 3 Tone Spacing = 1 MHz, Pout per tone = 0 dBm R BIAS = 39 Ohms T L = 25ºC Z S = ZL = 50 Ohms Applications Cellular, PCS, CDPD Wireless Data, SONET Satellite Gain & Return Loss vs. Freq. @TL=+25°C 0 4 8 12 16 01 234 56 Frequency (GHz) -40 -30 -20 -10 0 GAIN IRL ORL |
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