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MT8986AL Datasheet(PDF) 2 Page - Toshiba Semiconductor |
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MT8986AL Datasheet(HTML) 2 Page - Toshiba Semiconductor |
2 / 4 page MT3S35T 2 2002-08-19 Microwave Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Transition Frequency fT VCE=3V, IC=10mA, f=2GHz 16 20 - GHz |S21e| 2(1) VCE=3V, IC=10mA, f=1GHz 16 18 - dB Insertion Gain |S21e| 2(2) VCE=3V, IC=10mA, f=2GHz 11 13 - dB NF(1) VCE=3V, IC=2mA, f=1GHz - 1.1 - dB Noise Figure NF(2) VCE=3V, IC=2mA, f=2GHz - 1.4 1.9 dB Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Collector Cut-off Current ICBO VCB=8V, IE=0 - - 1 µA Emitter Cut-off Current IEBO VEB=1V, IC=0 - - 1 µA DC Current Gain hFE VCE=3V, IC=10mA 70 - 140 - Output Capacitance Cob VCB=1V, IE=0, f=1MHz - 0.46 0.75 pF Reverse Transistor Capacitance Cre VCB=1V, IE=0, f=1MHz (Note 1) - 0.21 0.4 pF Note 1: Cre is measured by 3 terminal method with capacitance bridge. Caution: This device is sensitive to electrostatic discharge. Please make enough tool and equipment earthed when you handle. |
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