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Product data sheet

Rev. 03 — 17 December 2004

3 of 15

Philips Semiconductors

PESD5V0S1BA/BB/BL

Low capacitance bidirectional ESD protection diodes

5.

Limiting values

[1]

Non-repetitive current pulse 8/20

µs exponentially decaying waveform according to IEC61000-4-5; see

Figure 1.

[2]

Measured from pin 1 to pin 2.

[1]

Measured from pin 1 to pin 2.

[2]

Device stressed with ten non-repetitive ElectroStatic Discharge (ESD) pulses; see Figure 2.

Table 6:

Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol

Parameter

Conditions

Min

Max

Unit

Per diode

peak pulse power

8/20

µs

[1] [2] -

130

W

peak pulse current

8/20

µs

[1] [2] -12

A

junction temperature

-

150

°C

ambient temperature

−65

+150

°C

storage temperature

−65

+150

°C

Table 7:

ESD maximum ratings

Symbol Parameter

Conditions

Min

Max

Unit

ESD

electrostatic discharge

capability

IEC 61000-4-2 (contact

discharge)

[1] [2] -30

kV

HBM MIL-Std 883

-

10

kV

Table 8:

ESD standards compliance

ESD Standard

Conditions

IEC 61000-4-2, level 4 (ESD); Figure 2

> 15 kV (air); > 8 kV (contact)

HBM MIL-STD 883; class 3

> 4 kV