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VNQ690SP Datasheet(PDF) 1 Page - STMicroelectronics |
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VNQ690SP Datasheet(HTML) 1 Page - STMicroelectronics |
1 / 19 page July 2004 1/19 ® VNQ690SP QUAD CHANNEL HIGH SIDE SOLID STATE RELAY s OUTPUT CURRENT PER CHANNEL: 10A s CMOS COMPATIBLE INPUTS s OPEN LOAD DETECTION (OFF STATE) s UNDERVOLTAGE & OVERVOLTAGE n SHUT- DOWN s OVERVOLTAGE CLAMP s THERMAL SHUT-DOWN s CURRENT LIMITATION s VERY LOW STAND-BY POWER DISSIPATION s PROTECTION AGAINST: n LOSS OF GROUND & LOSS OF VCC s REVERSE BATTERY PROTECTION (**) DESCRIPTION The VNQ690SP is a monolithic device made by using| STMicroelectronics VIPower M0-3 Technology, intended for driving resistive or inductive loads with one side connected to ground. This device has four independent channels. Built- in thermal shut down and output current limitation protect the chip from over temperature and short circuit. TYPE RDS(on) IOUT VCC VNQ690SP 90m Ω (*) 10 A 36 V ABSOLUTE MAXIMUM RATING (**) See application schematic at page 8 Symbol Parameter Value Unit VCC Supply voltage (continuous) 41 V -VCC Reverse supply voltage (continuous) -0.3 V IOUT Output current (continuous), per each channel Internally limited A IR Reverse output current (continuous), per each channel -15 A IIN Input current +/- 10 mA ISTAT Status current +/- 10 mA IGND Ground current at TC<25°C (continuous) -200 mA VESD Electrostatic Discharge (Human Body Model: R=1.5K Ω; C=100pF) - INPUT - STATUS - OUTPUT - VCC 4000 4000 5000 5000 V V V V Ptot Power dissipation at TC=25°C78 W EMAX Maximum Switching Energy (L=0.38mH; RL=0Ω; Vbat=13.5V; Tjstart=150ºC; IL=14A) 53 mJ Tj Junction operating temperature -40 to 150 °C Tstg Storage temperature -65 to 150 °C PowerSO-10™ 1 10 (*) Per each channel ORDER CODES PACKAGE TUBE T&R PowerSO-10 VNQ690SP VNQ690SP13TR Rev. 1 |
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