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BC546BZL1 Datasheet(PDF) 1 Page - ON Semiconductor |
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BC546BZL1 Datasheet(HTML) 1 Page - ON Semiconductor |
1 / 6 page © Semiconductor Components Industries, LLC, 2004 May, 2004 − Rev. 4 1 Publication Order Number: BC546/D BC546B, BC547A, B, C, BC548B, C Amplifier Transistors NPN Silicon Features • Pb−Free Package is Available* MAXIMUM RATINGS Rating Symbol Value Unit Collector-Emitter Voltage BC546 BC547 BC548 VCEO 65 45 30 Vdc Collector-Base Voltage BC546 BC547 BC548 VCBO 80 50 30 Vdc Emitter-Base Voltage VEBO 6.0 Vdc Collector Current − Continuous IC 100 mAdc Total Device Dissipation @ TA = 25°C Derate above 25 °C PD 625 5.0 mW mW/ °C Total Device Dissipation @ TC = 25°C Derate above 25 °C PD 1.5 12 Watt mW/ °C Operating and Storage Junction Temperature Range TJ, Tstg −55 to +150 °C Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction−to−Ambient RqJA 200 °C/W Thermal Resistance, Junction−to−Case RqJC 83.3 °C/W *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. TO−92 CASE 29 STYLE 17 3 2 1 http://onsemi.com MARKING DIAGRAM BC 54xx YWW G COLLECTOR 1 2 BASE 3 EMITTER See detailed ordering and shipping information in the package dimensions section on page 5 of this data sheet. ORDERING INFORMATION BC54xx = Specific Device Code Y = Year WW = Work Week G = Pb−Free Package |
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