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BGD702 Datasheet(PDF) 5 Page - NXP Semiconductors |
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BGD702 Datasheet(HTML) 5 Page - NXP Semiconductors |
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5 / 12 page  2001 Nov 27 5 Philips Semiconductors Product specification 750 MHz, 18.5 dB gain power doubler amplifier BGD702 Table 3 Bandwidth 40 to 550 MHz; VB = 24 V; Tmb =35 °C; ZS =ZL =75 Ω Notes 1. fp = 55.25 MHz; Vp = 44 dBmV; fq = 493.25 MHz; Vq = 44 dBmV; measured at fp +fq = 548.5 MHz. 2. Measured according to DIN45004B: fp = 540.25 MHz; Vp =Vo; fq = 547.25 MHz; Vq =Vo −6 dB; fr = 549.25 MHz; Vr =Vo −6 dB; measured at fp +fq − fr = 538.25 MHz. 3. The modules normally operate at VB = 24 V, but are able to withstand supply transients up to VB =30V. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT Gp power gain f = 50 MHz 18 18.5 19 dB f = 550 MHz 18.5 19.3 − dB SL slope cable equivalent f = 40 to 550 MHz 0.2 − 2dB FL flatness of frequency response f = 40 to 550 MHz −−±0.3 dB s11 input return losses f = 40 to 80 MHz 20 27 − dB f = 80 to 160 MHz 19 30 − dB f = 160 to 320 MHz 18 29 − dB f = 320 to 550 MHz 17 22 − dB s22 output return losses f = 40 to 80 MHz 20 23 − dB f = 80 to 160 MHz 19 24 − dB f = 160 to 320 MHz 18 23 − dB f = 320 to 550 MHz 17 21 − dB s21 phase response f = 50 MHz −45 − +45 deg CTB composite triple beat 77 channels flat; Vo = 44 dBmV; measured at 547.25 MHz −−68 −67 dB Xmod cross modulation 77 channels flat; Vo = 44 dBmV; measured at 55.25 MHz −−68 −67 dB CSO composite second order distortion 77 channels flat; Vo = 44 dBmV; measured at 548.5 MHz −−68 −62 dB d2 second order distortion note 1 −−81 −72 dB Vo output voltage dim = −60 dB; note 2 64.5 68 − dBmV NF noise figure see Table 1 −−− dB Itot total current consumption (DC) note 3 − 425 435 mA |
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