ZXT849KTC datasheet(4/6 Pages) ZETEX

Part #	ZXT849KTC

Description	30V NPN LOW SATURATION TRANSISTOR IN D-PAK

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Manufacturer	ZETEX [Zetex Semiconductors]

Direct Link	http://www.diodes.com/

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4 / 6 page

ZXT849K

SEMICO NDUC TORS

ISSUE 2 - DECEMBER 2003

4

PARAMETER

SYMBOL

MIN.

TYP.

MAX.

UNIT CONDITIONS

Collector-base breakdown voltage

BVCBO

80

125

V

IC=100 A

Collector-emitter breakdown voltage

BVCER

80

125

V

IC=1 A, RBE= 1k

Collector-emitter breakdown voltage

BVCEO

30

40

V

IC=10mA*

Emitter-base breakdown voltage

BVEBO

78

V

IE=100 A

Collector cut-off current

ICBO

20

nA

VCB=70V

Collector cut-off current

ICER

20

nA

VCB=70V, RBE= 1k

Emitter cut-off current

IEBO

10

nA

VEB=6V

Collector-emitter saturation voltage

VCE(SAT)

27

55

115

230

40

80

180

280

mV

IC=0.5A, IB=20mA*

I

C=1A, IB=20mA*

I

C=2A, IB=20mA*

I

C=7A, IB=350mA*

Base-emitter saturation voltage

VBE(SAT)

1.04

1.15

mV

IC=7A, IB=350mA*

Base-emitter turn-on voltage

VBE(ON)

0.93

1.1

mV

IC=7A, VCE=1V*

Static forward current transfer ratio

HFE

100

40

190

200

165

90

300

IC=10mA, VCE=1V*

I

C=1A, VCE=1V*

I

C=7A, VCE=1V*

I

C=20A, VCE=2V*

Transition frequency

fT

100

MHz IC=100mA, VCE=10V

f=50MHz

Output capacitance

COBO

75

pF

VCB=10V, f=1MHz*

Switching times

tON

tOFF

45

630

nS

IC=1A, VCC=10V,

IB1=IB2=100mA

ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated)

* Measured under pulsed conditions. Pulse width

300 s; duty cycle

2%.

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