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CPH5805 Datasheet(PDF) 2 Page - Sanyo Semicon Device |
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CPH5805 Datasheet(HTML) 2 Page - Sanyo Semicon Device |
2 / 5 page CPH5805 No.6981-2/5 Electrical Characteristics at Ta=25 °C Ratings Parameter Symbol Conditions min typ max Unit [MOSFET] Drain-to-Source Breakdown Voltage V(BR)DSS ID=1mA, VGS=0 30 V Zero-Gate Voltage Drain Current IDSS VDS=30V, VGS=0 1 µA Gate-to-Source Leakage Current IGSS VGS=±16V, VDS=0 ±10 µA Cutoff Voltage VGS(off) VDS=10V, ID=1mA 1.2 2.6 V Forward Transfer Admittance yfs VDS=10V, ID=1.5A 2.1 3 S Static Drain-to-Source On-State Resistance RDS(on)1 ID=1.5A, VGS=10V 64 84 m Ω RDS(on)2 ID=1A, VGS=4V 105 150 m Ω Input Capacitance Ciss VDS=10V, f=1MHz 180 pF Output Capacitance Coss VDS=10V, f=1MHz 42 pF Reverse Transfer Capacitance Crss VDS=10V, f=1MHz 25 pF Turn-ON Delay Time td(on) See specified Test Circuit 7 ns Rise Time tr See specified Test Circuit 28 ns Turn-OFF Delay Time td(off) See specified Test Circuit 18.5 ns Fall Time tf See specified Test Circuit 4.4 ns Total Gate Charge Qg VDS=10V, VGS=10V, ID=3A 4.9 nC Gate-to-Source Charge Qgs VDS=10V, VGS=10V, ID=3A 0.93 nC Gate-to-Drain “Miller” Charge Qgd VDS=10V, VGS=10V, ID=3A 0.63 nC Diode Forward Voltage VSD IS=3A, VGS=0 0.85 1.2 V [SBD] Reverse Voltage VR IR=0.5mA 30 V Forward Voltage VF1IF=0.3A 0.35 0.4 V VF2IF=0.5A 0.42 0.47 V Reverse Current IR VR=10V 200 µA Interterminal Capacitance C VR=10V, f=1MHz cycle 20 pF Reverse Recovery Time trr IF=IR=100mA 10 ns Electrical Connection (Top view) Switching Time Test Circuit trr Test Circuit [MOSFET] [SBD] PW=10 µs D.C. ≤1% P.G 50 Ω G S D ID=1A RL=15Ω VDD=15V VOUT CPH5805 (MOSFET) VIN 10V 0V VIN Duty ≤10% 50 Ω 100 Ω 10 Ω --5V trr 10 µs 54 3 12 1 : Cathode 2 : Drain 3 : Gate 4 : Source 5 : Anode |
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