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CY7C1350F-200BGI Datasheet(PDF) 7 Page - Cypress Semiconductor

Part # CY7C1350F-200BGI
Description  4-Mb (128K x 36) Pipelined SRAM with Nobl Architecture
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Manufacturer  CYPRESS [Cypress Semiconductor]
Direct Link  http://www.cypress.com
Logo CYPRESS - Cypress Semiconductor

CY7C1350F-200BGI Datasheet(HTML) 7 Page - Cypress Semiconductor

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CY7C1350F
Document #: 38-05305 Rev. *A
Page 7 of 16
Partial Truth Table for Read/Write[2, 3, 9]
Function
WE
BWD
BWC
BWB
BWA
Read
H
X
X
X
X
Write
− No bytes written
L
H
H
H
H
Write Byte A
− (DQA and DQPA)
L
HHH
L
Write Byte B
− (DQB and DQPB)L
H
H
L
H
Write Bytes A, B
L
H
H
L
L
Write Byte C
− (DQC and DQPC)L
H
L
H
H
Write Bytes C,A
L
H
L
H
L
Write Bytes C, B
L
H
L
L
H
Write Bytes C, B, A
L
H
L
L
L
Write Byte D
− (DQD and DQPD)L
L
H
H
H
Write Bytes D, A
L
L
H
H
L
Write Bytes D, B
L
L
H
L
H
Write Bytes D, B, A
L
L
H
L
L
Write Bytes D, C
L
L
L
H
H
Write Bytes D, C, A
L
L
L
H
L
Write Bytes D, C, B
L
L
L
L
H
Write All Bytes
L
L
L
L
L
Note:
9. Table only lists a partial listing of the byte write combinations. Any combination of BW[A:D] is valid. Appropriate write will be done on which byte write is active.
ZZ Mode Electrical Characteristics
Parameter
Description
Test Conditions
Min.
Max.
Unit
IDDZZ
Snooze mode standby current
ZZ > VDD − 0.2V
40
mA
tZZS
Device operation to ZZ
ZZ > VDD − 0.2V
2tCYC
ns
tZZREC
ZZ recovery time
ZZ < 0.2V
2tCYC
ns
tZZI
ZZ active to snooze current
This parameter is sampled
2tCYC
ns
tRZZI
ZZ inactive to exit snooze current
This parameter is sampled
0
ns


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