NTE234 datasheet(2/2 Pages) NTE

Part #	NTE234

Description	Silicon PNP Transistor Low Noise, High Gain Amplifier

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Manufacturer	NTE [NTE Electronics]

Direct Link	http://www.nteinc.com

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Electrical Characteristics (Cont’d): (TA = +25°C unless otherwise specified)

Parameter

Symbol

Test Conditions

Min

Typ

Max

Unit

Saturation Voltage

Collector–to–Emitter

VCE(sat)

IC = 10mA, IB = 1mA

–

0.3

V

Base–to–Emitter Voltage

VBE

VCE = 6V, IC = 2mA

–

0.65

–

V

Transition Frequency

fT

VCE = 6V, IC = 1mA

–

100

–

MHz

Collector Output Capacitance

Cob

VCB = 10V, IE = 0, f = 1MHz

–

4

–

pF

Noise Figure

NF

VCE = 6V, IC = 100µA,

f = 10Hz, Rg = 10kΩ

–

6

dB

VCE = 6V, IC = 100µA,

f = 1Hz, Rg = 10kΩ

–

2

VCE = 6V, IC = 100µA,

f = 1Hz, Rg = 100kΩ

–

3

–

.021 (.445) Dia Max

E C B

Seating Plane

.135 (3.45) Min

.100 (2.54)

.050 (1.27)

.105 (2.67) Max

.205 (5.2) Max

.210

(5.33)

Max

.500

(12.7)

Min

.165

(4.2)

Max

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