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IRK.142 Datasheet(PDF) 2 Page - International Rectifier

Part # IRK.142
Description  THYRISTOR/DIODE and THYRISTOR/THYRISTOR
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Manufacturer  IRF [International Rectifier]
Direct Link  http://www.irf.com
Logo IRF - International Rectifier

IRK.142 Datasheet(HTML) 2 Page - International Rectifier

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IRK.136, .142, .162 Series
2
Bulletin I27117 rev. C 03/02
www.irf.com
Type number
Voltage V
RRM/VDRM , Maximum repetitive
V
RSM/VDSM, Maximum non-repetitive
I
RRM / IDRM
Code
peak reverse voltage
peak reverse voltage
@ 125°C
VV
m A
IRK.136
04
400
500
50
IRK.142
08
800
900
IRK.162
12
1200
1300
14
1400
1500
16
1600
1700
I
T(AV)
Max. average on-state current
135
140
160
A
180° conduction, half sine wave
@ Case temperature
85
85
85
°C
I
T(RMS) Max. RMS on-state current
300
310
355
A
as AC switch
I
TSM
Maximum peak, one-cycle
3200
4500
4870
A
t = 10ms No voltage
on-state, non-repetitive
3360
4712
5100
t = 8.3ms reapplied
surge current
2700
3785
4100
t = 10ms 100% V
RRM
2800
3963
4300
t = 8.3ms reapplied
Sine half wave,
I2t
Maximum I2t for fusing
51.5
102
119
KA2s
t = 10ms No voltage
Initial T
J = TJ max.
47
92.5
108
t = 8.3ms reapplied
36.5
71.6
84
t = 10ms 100% V
RRM
33.3
65.4
76.7
t = 8.3ms reapplied
I2
√t
Maximum I2
√t for fusing
515.5
1013
1190
KA2
√s t = 0.1 to 10ms, no voltage reapplied
V
T(TO)1 Low level value of threshold
0.86
0.83
0.8
V
(16.7% x
π x I
T(AV) < I < π x IT(AV)), @ TJ max.
voltage
V
T(TO)2 High level value of threshold
1.05
1
0.98
(I >
π x I
T(AV)), @ TJ max.
voltage
rt1
Low level value on-state
2.02
1.78
1.67
m
(16.7% x
π x I
T(AV) < I < π x IT(AV)), @ TJ max.
slope resistance
rt2
High level value on-state
1.65
1.43
1.38
(I >
π x I
T(AV)), @ TJ max.
slope resistance
V
TM
Maximum forward voltage drop
1.57
1.55
1.54
V
I
TM = π x IT(AV), TJ = 25°C, 180°conduction
I
H
Maximum holding current
200
mA
Anode supply = 6V initial I
T = 30A, TJ = 25°C
I
L
Maximum latching current
400
mA
Anode supply = 6V resistive load = 1
Gate pulse: 10V, 100µs, T
J = 25°C
tgd
Typical delay time
1
T
J = 25
o
C
Gate Current=1A dIg/
dt=1A/µs
tgr
Typical rise time
2
µs
T
J = 25
o
C
Vd=0,67% VDRM
tq
Typical turn-off time
50 - 200
I
TM = 300 A; -dI/dt = 15 A/µs; TJ = TJ max
Vr = 50 V; dV/dt = 20 V/µs; Gate 0 V, 100Ω
Parameter
IRK.136
IRK.142
IRK.162
Units Conditions
Forward Conduction
Switching
Electrical Specifications
Voltage Ratings


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