IRK.136, .142, .162 Series

3

Bulletin I27117 rev. C 03/02

www.irf.com

Thermal and Mechanical Specifications

T

J

Max. junction operating

-40 to 125

°C

temperature range

T

stg

Max. storage temperature

-40 to 150

°C

range

0.18

0.18

0.16

K/W

DC operation, per junction

junction to case

0.05

K/W

Mounting surface smooth, flat and greased

case to heatsink

Per module

T

Mounting

IAP to heatsink

4 to 6

Nm

torque ± 10% busbar to IAP

4 to 6

wt

Approximate weight

200 (7.1)

g(oz)

Case Style

New Int-A-Pak

A mounting compound is recommended and

the torque should be rechecked after a period

of 3 hours to allow for the spread of the

compound. Lubricated threads.

Triggering

P

GM

Max. peak gate power

12

W

tp

≤ 5ms, T

3

W

f=50Hz, T

I

GM

Max. peak gate current

3

A

tp

≤ 5ms, T

-V

GT

Max. peak negative

10

V

gate voltage

V

GT

Max. required DC gate

4

V

Anodesupply=6V,resistive

voltage to trigger

2.5

load;Ra=1

Ω

1.7

I

GT

Max. required DC gate

270

Anodesupply=6V,resistive

current to trigger

150

mA

load;Ra=1

Ω

80

V

GD

Max. gate voltage

0.3

V

@ T

that will not trigger

I

GD

Max. gate current

10

mA

that will not trigger

di/

dt

Max. rate of rise of

300

A/µs

@T

turned-on current

Devices

Units

IRK.136

0.007

0.01

0.013

0.0155

0.017

0.009

0.012

0.014

0.015

0.017

IRK.142

0.0019

0.0019

0.0020

0.0020

0.0021

0.0018

0.0022

0.0023

0.0023

0.0020

K/W

IRK.162

0.0030

0.0031

0.0032

0.0033

0.0034

0.0029

0.0036

0.0039

0.0041

0.0040

∆R Conduction (per Junction)

(The following table shows the increment of thermal resistance R

Parameter

IRK.136

IRK.142

IRK.162

Units Conditions

Parameter

IRK.136

IRK.142

IRK.162

Units Conditions

Blocking

I

RRM

Maximum peak reverse and

50

mA

T

o

C

V

INS

RMS isolation voltage

3500

V

50Hz, circuit to base, all terminals shorted, t = 1s

dV/dt critical rate of rise of off-state voltage

1000

V/µs