800mA, 2MHz, PWM DC-to-DC

2

_______________________________________________________________________________________

ABSOLUTE MAXIMUM RATINGS

ELECTRICAL CHARACTERISTICS

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional

operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to

absolute maximum rating conditions for extended periods may affect device reliability.

ABATT, BATT, EN1, EN2, RESET, OUT,

SS to GND ............................................................-0.3V to +6V

PGND to GND .......................................................-0.3V to +0.3V

LX Current (Note 1) .............................................................

±2.1A

Output Short-Circuit Duration ............................................Infinite

°C)

12-Pin Thin QFN (derate 16.9mW/

°C above +70°C)...1349mW

Operating Temperature Range ...........................-40

°C to +85°C

Junction Temperature ......................................................+150

°C

Storage Temperature Range .............................-65

°C to +150°C

Lead Temperature (soldering, 10s) .................................+300

°C

PARAMETER

CONDITIONS

MIN

TYP

MAX

UNITS

BATT Input Voltage

2.6

5.5

V

Undervoltage Lockout Threshold

2.20

2.35

2.55

V

EN1 = GND, EN2 = BATT, no switching

48

80

Quiescent Supply Current

EN1 = BATT, EN2 = GND, no switching

700

µA

Shutdown Supply Current

0.1

1

µA

Maximum Output Current

800

mA

OUT Bias Current

69

µA

No load, EN1 = EN2 = BATT

1.2

3.2

100mA load

-0.4

+0.8

+2.0

300mA load

0

550mA load

-1

Output-Voltage Accuracy

(Voltage Positioning)

800mA load

-2

%

Line Regulation

0.3

%/V

0.28

0.45

P-Channel On-Resistance

0.33

Ω

0.18

0.30

N-Channel On-Resistance

0.20

Ω

P-Channel Current-Limit Threshold

1.00

1.25

1.65

A

N-Channel Current-Limit Threshold

EN1 = EN2 = BATT

-0.68

-0.52

-0.37

A

N-Channel Zero-Crossing Threshold

EN1 = BATT, EN2 = GND

15

40

65

mA

LX Output Current

(Note 2)

1.4

LX Leakage Current

EN1 = EN2 = GND

0.1

10

µA

Maximum Duty Cycle

100

%

EN1 = BATT, EN2 = GND or

EN1 = GND, EN2 = BATT

0

Minimum Duty Cycle

EN1 = EN2 = BATT

16.7

17.3

%

Switching Frequency

1.8

2

2.2

MHz

SS Output Impedance

65

100

150

k

Ω

Note 1: LX has internal clamp diodes to PGND and BATT. Applications that forward bias these diodes should take care not to

exceed the IC’s package power dissipation limits.