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MCH5818 Datasheet(PDF) 2 Page - Sanyo Semicon Device |
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MCH5818 Datasheet(HTML) 2 Page - Sanyo Semicon Device |
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2 / 5 page  MCH5818 No.7754-2/5 Electrical Characteristics at Ta=25 °C Ratings Parameter Symbol Conditions min typ max Unit [MOSFET] Drain-to-Source Breakdown Voltage V(BR)DSS ID=--1mA, VGS=0 --12 V Zero-Gate Voltage Drain Current IDSS VDS=--12V, VGS=0 --1 µA Gate-to-Source Leakage Current IGSS VGS=±9.6V, VDS=0 ±10 µA Cutoff Voltage VGS(off) VDS=--6V, ID=--1mA --1.0 --2.4 V Forward Transfer Admittance yfs VDS=--6V, ID=--0.8A 0.9 1.4 S RDS(on)1 ID=--0.8A, VGS=--10V 200 270 m Ω Static Drain-to-Source On-State Resistance RDS(on)2 ID=--0.4A, VGS=--4.5V 340 490 m Ω RDS(on)3 ID=--0.1A, VGS=--4V 370 530 m Ω Input Capacitance Ciss VDS=--6V, f=1MHz 145 pF Output Capacitance Coss VDS=--6V, f=1MHz 45 pF Reverse Transfer Capacitance Crss VDS=--6V, f=1MHz 35 pF Turn-ON Delay Time td(on) See specified Test Circuit 7.5 ns Rise Time tr See specified Test Circuit 20 ns Turn-OFF Delay Time td(off) See specified Test Circuit 16 ns Fall Time tf See specified Test Circuit 12 ns Total Gate Charge Qg VDS=--10V, VGS=--10V, ID=--1.5A 3.8 nC Gate-to-Source Charge Qgs VDS=--10V, VGS=--10V, ID=--1.5A 0.5 nC Gate-to-Drain “Miller” Charge Qgd VDS=--10V, VGS=--10V, ID=--1.5A 0.5 nC Diode Forward Voltage VSD IS=--1.5A, VGS=0 --0.94 --1.5 V [SBD] Reverse Voltage VR IR=0.5mA 15 V Forward Voltage VF1IF=0.3A 0.35 0.41 V VF2IF=0.5A 0.4 0.46 V Reverse Current IR VR=6V 200 µA Interterminal Capacitance C VR=10V, f=1MHz, 1 cycle 20 pF Reverse Recovery Time trr IF=IR=100mA, See specified Test Circuit. 10 ns Package Dimensions Electrical Connection unit : mm 2195 1 : Gate 2 : Source 3 : Anode 4 : Cathode 5 : Drain SANYO : MCPH5 2.0 0.65 0.3 0.15 1 32 4 5 12 3 54 (Bottom view) (Top view) 54 13 2 1 : Gate 2 : Source 3 : Anode 4 : Cathode 5 : Drain Top view |
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Similar Description - MCH5818 |
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