Parameter

Symbol

Test Conditions

Min

Typ

Max

Unit

Drain–to–Source Breakdown Voltage

100

–

–

V

Breakdown Voltage Temp. Coefficient

Reference to +25

–

0.14

–

V/

°C

Static Drain–to–Source On–Resistance

–

–

0.055

Ω

Gate Threshold Voltage

2.0

–

4.0

V

Forward Transconductance

13

–

–

mhos

Drain–to–Source Leakage Current

–

–

25

µA

–

–

250

µA

Gate–to–Source Forward Leakage

–

–

100

nA

Gate–to–Source Reverse Leakage

–

–

–100

nA

Total Gate Charge

–

–

140

nC

Gate–to–Source Charge

Note 4

–

–

29

nC

Gate–to–Drain (“Miller”) Charge

–

–

68

nC

Turn–On Delay Time

Ω

–

16

–

ns

Rise Time

–

120

–

ns

Turn–Off Delay Time

–

60

–

ns

Fall Time

–

81

–

ns

Internal Drain Inductance

Between lead, .250in. (6.0) mm from

–

5.0

–

nH

Internal Source Inductance

package and center of die contact

–

13.0

–

nH

Input Capacitance

–

2800

–

pF

Output Capacitance

–

1100

–

pF

Reverse Transfer Capaticance

–

280

–

pF

Source–Drain Ratings and Characteristics:

Parameter

Symbol

Test Conditions

Min

Typ

Max

Unit

Continuous Source Current (Body Diode)

–

–

41

A

Pulsed Source Current (Body Diode)

Note 1

–

–

160

A

Diode Forward Voltage

Note 4

–

–

2.5

V

Reverse Recovery Time

–

220

330

ns

Reverse Recovery Charge

di/dt = 100A/

µs, Note 4

–

1.9

2.9

µC

Forward Turn–On Time

Note 1. Repetitive rating; pulse width limited by maximum junction temperature.

Note 4. Pulse width

≤ 300µs; duty cycle ≤ 2%.