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PHB110NQ08LT Datasheet(PDF) 8 Page - NXP Semiconductors |
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PHB110NQ08LT Datasheet(HTML) 8 Page - NXP Semiconductors |
8 / 13 page Philips Semiconductors PHP/PHB110NQ08LT N-channel TrenchMOS™ logic level FET Product data Rev. 01 — 29 March 2004 8 of 13 9397 750 12924 © Koninklijke Philips Electronics N.V. 2004. All rights reserved. Tj =25 °C and 175 °C; VGS =0V ID = 25 A; VDD = 14 V and 60 V Fig 12. Source (diode forward) current as a function of source-drain (diode forward) voltage; typical values. Fig 13. Gate-source voltage as a function of gate charge; typical values. 03ap62 0 25 50 75 0 0.3 0.6 0.9 1.2 VSD (V) IS (A) Tj = 25 °C 175 °C VGS = 0 V 03ap64 0 2 4 6 8 10 0 50 100 150 QG (nC) VGS (V) ID = 25 A Tj = 25 °C VDD = 60 V 14 V |
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