PDTA123JEF datasheet(2/14 Pages) PHILIPS

Part #	PDTA123JEF

Description	NPN resistor-equipped transistors; R1 = 2.2 kOHM, R2 = 47 kOHM

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Manufacturer	PHILIPS [NXP Semiconductors]

Direct Link	http://www.nxp.com

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2 / 14 page

2004 Aug 13

2

Philips Semiconductors

Product speciﬁcation

NPN resistor-equipped transistors;

R1 = 2.2 k

Ω, R2 = 47 kΩ

PDTC123J series

FEATURES

• Built-in bias resistors

• Simplified circuit design

• Reduction of component count

• Reduced pick and place costs.

APPLICATIONS

• General purpose switching and amplification

• Inverter and interface circuits

• Circuit driver.

QUICK REFERENCE DATA

DESCRIPTION

NPN resistor-equipped transistor (see “Simplified outline,

symbol and pinning” for package details).

SYMBOL

PARAMETER

TYP.

MAX.

UNIT

VCEO

collector-emitter

voltage

−

50

V

IO

output current (DC)

−

100

mA

R1

bias resistor

2.2

−

k

Ω

R2

bias resistor

47

−

k

Ω

PRODUCT OVERVIEW

Note

1. * = p: Made in Hong Kong.

* = t: Made in Malaysia.

* = W: Made in China.

TYPE NUMBER

PACKAGE

MARKING CODE

PNP COMPLEMENT

PHILIPS

EIAJ

PDTC123JE

SOT416

SC-75

28

PDTA123JE

PDTC123JEF

SOT490

SC-89

28

PDTA123JEF

PDTC123JK

SOT346

SC-59

49

PDTA123JK

PDTC123JM

SOT883

SC-101

DW

PDTA123JM

PDTC123JS

SOT54 (TO-92)

SC-43

TC123J

PDTA123JS

PDTC123JT

SOT23

−

*25(1)

PDTA123JT

PDTC123JU

SOT323

SC-70

*49(1)

PDTA123JU

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PDTA123JEF Datasheet(PDF) 2 Page - NXP Semiconductors

PDTA123JEF Datasheet(HTML) 2 Page - NXP Semiconductors

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