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PDTA123JEF Datasheet(PDF) 2 Page - NXP Semiconductors |
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PDTA123JEF Datasheet(HTML) 2 Page - NXP Semiconductors |
2 / 14 page 2004 Aug 13 2 Philips Semiconductors Product specification NPN resistor-equipped transistors; R1 = 2.2 k Ω, R2 = 47 kΩ PDTC123J series FEATURES • Built-in bias resistors • Simplified circuit design • Reduction of component count • Reduced pick and place costs. APPLICATIONS • General purpose switching and amplification • Inverter and interface circuits • Circuit driver. QUICK REFERENCE DATA DESCRIPTION NPN resistor-equipped transistor (see “Simplified outline, symbol and pinning” for package details). SYMBOL PARAMETER TYP. MAX. UNIT VCEO collector-emitter voltage − 50 V IO output current (DC) − 100 mA R1 bias resistor 2.2 − k Ω R2 bias resistor 47 − k Ω PRODUCT OVERVIEW Note 1. * = p: Made in Hong Kong. * = t: Made in Malaysia. * = W: Made in China. TYPE NUMBER PACKAGE MARKING CODE PNP COMPLEMENT PHILIPS EIAJ PDTC123JE SOT416 SC-75 28 PDTA123JE PDTC123JEF SOT490 SC-89 28 PDTA123JEF PDTC123JK SOT346 SC-59 49 PDTA123JK PDTC123JM SOT883 SC-101 DW PDTA123JM PDTC123JS SOT54 (TO-92) SC-43 TC123J PDTA123JS PDTC123JT SOT23 − *25(1) PDTA123JT PDTC123JU SOT323 SC-70 *49(1) PDTA123JU |
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