2003 Mar 07

3

Philips Semiconductors

Preliminary specification

PMEG1020EA

ELECTRICAL CHARACTERISTICS

Notes

2. For Schottky barrier diodes thermal runaway has to be considered, as in some applications the reverse power losses

THERMAL CHARACTERISTICS

Notes

1. Refer to SOD323 (SC-76) standard mounting conditions.

2. Device mounted on an FR4 printed-circuit board with copper clad 10 x 10 mm.

3. Solder point of cathode tab.

SYMBOL

PARAMETER

CONDITIONS

TYP.

MAX.

UNIT

forward voltage

see Fig.2; note 1

100

130

mV

170

200

mV

280

350

mV

350

460

mV

reverse current

see Fig.3; note 2

0.7

2

mA

1

2.5

mA

1.2

3

mA

diode capacitance

45

pF

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

thermal resistance from junction to ambient

note 1

450

K/W

note 2

210

K/W

thermal resistance from junction to solder point

note 3

90

K/W