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SPA06N60C3 Datasheet(PDF) 1 Page - Infineon Technologies AG |
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SPA06N60C3 Datasheet(HTML) 1 Page - Infineon Technologies AG |
1 / 10 page SPA06N60C3 CoolMOS TM Power Transistor Features • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • High peak current capability • Ultra low effective capacitances • Extreme dv /dt rated • Improved transconductance • Fully isolated package (2500 V AC; 1 minute) Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Unit Continuous drain current 1) I D T C=25 °C A T C=100 °C Pulsed drain current 1) I D,pulse T C=25 °C Avalanche energy, single pulse E AS I D=3.1 A, V DD=50 V 200 mJ Avalanche energy, repetitive t AR 1),2) E AR I D=6.2 A, V DD=50 V Avalanche current, repetitive t AR 1) I AR A Drain source voltage slope dv /dt I D=6.2 A, V DS=480 V, T j=125 °C V/ns Gate source voltage V GS static V V GS AC (f >1 Hz) Power dissipation P tot T C=25 °C W Operating and storage temperature T j, T stg °C ±20 ±30 32 -55 ... 150 0.5 6.2 50 Value 6.2 3.9 18.6 V DS @ T j,max 650 V R DS(on),max 0.75 Ω I D 1) 6.2 A Product Summary P-TO220-3-31 Type Package Ordering Code Marking SPA06N60C3 P-TO220-3-31 Q67040-S4631 06N60C3 Rev. 1.0 page 1 2004-04-27 |
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