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J6 Marking, S9014 Datasheet(PDF) 2 Page - Galaxy Semi-Conductor Holdings Limited

Part No. S9014
Description  Silicon Epitaxial Planar Transistor
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Manufacturer  BILIN [Galaxy Semi-Conductor Holdings Limited]
Direct Link  http://www.galaxycn.com
Logo BILIN - Galaxy Semi-Conductor Holdings Limited

S9014 Datasheet(HTML) 2 Page - Galaxy Semi-Conductor Holdings Limited

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BL Galaxy Electrical
Production specification
Silicon Epitaxial Planar Transistor
S9014
Document number: BL/SSSTC083
www.galaxycn.com
Rev.A
2
ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Parameter
Symbol
Test conditions
MIN
TYP
MAX
UNIT
Collector-base breakdown voltage
V(BR)CBO
IC=100μA,IE=0
50
V
Collector-emitter breakdown voltage V(BR)CEO
IC=0.1mA,IB=0
B
45
V
Emitter-base breakdown voltage
V(BR)EBO
IE=-100μA,IC=0
5
V
Collector cut-off current
ICBO
VCB=50V,IE=0
0.1
μA
Collector cut-off current
ICEO
VCE=35V,IB=0
B
0.1
μA
Emitter cut-off current
IEBO
VEB=3V,IC=0
0.1
μA
DC current gain
hFE
VCE=5V,IC=1mA
200
1000
Collector-emitter saturation voltage
VCE(sat)
IC=100mA, IB= 5mA
B
0.3
V
Base-emitter saturation voltage
VBE(sat)
IC=100mA, IB= 5mA
B
1
V
Transition frequency
fT
VCE=6V, IC= 20mA
f=30MHz
150
MHz
CLASSIFICATION OF hFE(1)
Rank
L
H
Range
200-450
450-1000


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