TPC6005 datasheet(4/6 Pages) TOSHIBA

Part #	TPC6005

Description	TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIII)

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Manufacturer	TOSHIBA [Toshiba Semiconductor]

Direct Link	http://www.semicon.toshiba.co.jp/eng

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4 / 6 page

TPC6005

2001-12-17

4

Ambient temperature Ta (

°C)

RDS (ON) – Ta

Drain-source voltage VDS (V)

IDR – VDS

Drain-source voltage VDS

Capacitance

– VDS

Ambient temperature Ta (

°C)

Vth – Ta

Ambient temperature Ta (

°C)

PD – Ta

Total gate charge Qg (nC)

Dynamic input/output characteristics

0

10

20

30

40

50

-80

-40

0

40

80

160

120

ソース接地

パルス測定

60

0

10

20

30

40

50

-80

-40

0

40

80

160

120

ID = 6 A

VGS = 2 V

1.5 A

Common source

Pulse test

60

ID = 1.5 A, 3 A, 6 A

VGS = 4.5 V

3 A

6 A

ID = 1.5 A, 3 A

VGS = 2.5 V

0

0.5

1.5

2.0

-80

-40

0

40

80

160

Common source

VDS = 10 V

ID = 200 mA

Pulse test

120

1.0

0

08

16

10

30

50

0

4

12

20

16

24

32

40

20

40

8

6 V

12 V

VDD = 24 V

VGS

VDS

Common source

ID = 6 A

Ta

= 25°C

Pulse test

0

0.5

1

1.5

2

2.5

40

80

120

160

(1) Device mounted on a

glass-epoxy board (a)

(Note 2a)

(2) Device mounted on a

glass-epoxy board (b)

(Note 2b)

(1) t

= 5 s

(2) t

= 5 s

(1) DC

(2) DC

0.1

1

10

0

0.8

1.2

1.6

2.0

0.4

3

0.3

100

Common source

Ta

= 25°C

Pulse test

30

3 V

1 V

VGS = 0 V

5 V

10 V

10

100

1000

10000

0.1

1

10

100

3000

300

30

0.3

3

30

Ciss

Crss

Coss

Common source

VGS = 0 V

f

= 1 MHz

Ta

= 25°C

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