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1PS66SB63 Datasheet(PDF) 3 Page - NXP Semiconductors |
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1PS66SB63 Datasheet(HTML) 3 Page - NXP Semiconductors |
3 / 10 page 9397 750 13846 © Koninklijke Philips Electronics N.V. 2004. All rights reserved. Product data sheet Rev. 02 — 3 December 2004 3 of 10 Philips Semiconductors 1PS66SB63; 1PS79SB63 5 V, 20 mA low Cd Schottky barrier diodes 5. Limiting values 6. Thermal characteristics [1] For Schottky barrier diodes thermal run-away has to be considered, as in some applications the reverse power losses PR are a significant part of the total power losses. Nomograms for determining the reverse power losses PR and IF(AV) rating will be available on request. [2] Refer to SOT666 standard mounting conditions. [3] Reflow soldering is the only recommended soldering method. [4] Refer to SOD523 (SC-79) standard mounting conditions. 7. Characteristics [1] Pulse test: tp ≤ 300 µs; δ≤ 0.02. Table 6: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VR continuous reverse voltage - 5 V IF continuous forward current - 20 mA Tj junction temperature - 125 °C Tamb ambient temperature −65 +125 °C Tstg storage temperature −65 +150 °C Table 7: Thermal characteristics Symbol Parameter Conditions Min Typ Max Unit Rth(j-a) thermal resistance from junction to ambient in free air [1] SOT666 [2] [3] - - 700 K/W SOD523 [4] - - 450 K/W Table 8: Characteristics Tamb =25 °C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit VF forward voltage see Figure 1; [1] IF = 0.1 mA - 160 200 mV IF = 1 mA - 240 300 mV IR reverse current see Figure 2; VR = 1 V - 0.4 1 µA VR = 5 V - - 50 µA Cd diode capacitance VR = 0 V; f = 1 MHz; see Figure 3 - 0.35 0.5 pF Ls series inductance - 0.6 - nH |
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