1PS66SB63 datasheet(3/10 Pages) PHILIPS

Part #	1PS66SB63

Description	5 V, 20 mA low Cd Schottky barrier diodes

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Manufacturer	PHILIPS [NXP Semiconductors]

Direct Link	http://www.nxp.com

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3 / 10 page

9397 750 13846

Product data sheet

Rev. 02 — 3 December 2004

3 of 10

Philips Semiconductors

1PS66SB63; 1PS79SB63

5 V, 20 mA low Cd Schottky barrier diodes

5.

Limiting values

6.

Thermal characteristics

[1]

For Schottky barrier diodes thermal run-away has to be considered, as in some applications the reverse

power losses PR are a signiﬁcant part of the total power losses. Nomograms for determining the reverse

power losses PR and IF(AV) rating will be available on request.

[2]

Refer to SOT666 standard mounting conditions.

[3]

Reﬂow soldering is the only recommended soldering method.

[4]

Refer to SOD523 (SC-79) standard mounting conditions.

7.

Characteristics

[1]

Pulse test: tp ≤ 300 µs; δ≤ 0.02.

Table 6:

Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter

Conditions

Min

Max

Unit

VR

continuous reverse voltage

-

5

V

IF

continuous forward current

-

20

mA

Tj

junction temperature

-

125

°C

Tamb

ambient temperature

−65

+125

°C

Tstg

storage temperature

−65

+150

°C

Table 7:

Thermal characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Rth(j-a)

thermal resistance from

junction to ambient

in free air

[1]

SOT666

[2] [3] -

-

700

K/W

SOD523

[4] -

-

450

K/W

Table 8:

Characteristics

Tamb =25 °C unless otherwise speciﬁed.

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

VF

forward voltage

see Figure 1;

[1]

IF = 0.1 mA

-

160

200

mV

IF = 1 mA

-

240

300

mV

IR

reverse current

see Figure 2;

VR = 1 V

-

0.4

1

µA

VR = 5 V

-

50

µA

Cd

diode

capacitance

VR = 0 V; f = 1 MHz;

see Figure 3

-

0.35

0.5

pF

Ls

series inductance

-

0.6

-

nH

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