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2SK3125 Datasheet(PDF) 1 Page - Toshiba Semiconductor |
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2SK3125 Datasheet(HTML) 1 Page - Toshiba Semiconductor |
1 / 6 page 2SK3125 2002-08-23 1 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSVI) 2SK3125 DC-DC Converter, Relay Drive and Motor Drive Applications · Low drain-source ON resistance: RDS (ON) = 5.3 mΩ (typ.) · High forward transfer admittance: |Yfs| = 60 S (typ.) · Low leakage current: IDSS = 100 µA (max) (VDS = 30 V) · Enhancement-model: Vth = 1.5~3.0 V (VDS = 10 V, ID = 1 mA) Maximum Ratings (Ta ==== 25°C) Characteristics Symbol Rating Unit Drain-source voltage VDSS 30 V Drain-gate voltage (RGS = 20 kW) VDGR 30 V Gate-source voltage VGSS ±20 V DC (Note 1) ID 70 Drain current Pulse (Note 1) IDP 210 A Drain power dissipation (Tc = 25°C) PD 150 W Single pulse avalanche energy (Note 2) EAS 955 mJ Avalanche current IAR 70 A Repetitive avalanche energy (Note 3) EAR 15 mJ Channel temperature Tch 150 °C Storage temperature range Tstg -55~150 °C Thermal Characteristics Characteristics Symbol Max Unit Thermal resistance, channel to case Rth (ch-c) 0.833 °C/W Note 1: Please use devices on condition that the channel temperature is below 150°C. Note 2: VDD = 25 V, Tch = 25°C, L = 140 mH, RG = 25 W, IAR = 70 A Note 3: Repetitive rating: Pulse width limited by maximum channel temperature This transistor is an electrostatic sensitive device. Please handle with caution. Unit: mm JEDEC ― JEITA ― TOSHIBA 2-16H1A Weight: 3.65 g (typ.) |
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