2SK3125 datasheet(1/6 Pages) TOSHIBA

Part #	2SK3125

Description	TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (PIE-MOSVI)

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Manufacturer	TOSHIBA [Toshiba Semiconductor]

Direct Link	http://www.semicon.toshiba.co.jp/eng

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2SK3125

2002-08-23

1

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSVI)

2SK3125

DC-DC Converter, Relay Drive and

Motor Drive Applications

· Low drain-source ON resistance: RDS (ON) = 5.3 mΩ (typ.)

· High forward transfer admittance: |Yfs| = 60 S (typ.)

· Low leakage current: IDSS = 100 µA (max) (VDS = 30 V)

· Enhancement-model: Vth = 1.5~3.0 V (VDS = 10 V, ID = 1 mA)

Maximum Ratings (Ta

==== 25°C)

Characteristics

Symbol

Rating

Unit

Drain-source voltage

VDSS

30

V

Drain-gate voltage (RGS = 20 kW)

VDGR

30

V

Gate-source voltage

VGSS

±20

V

DC

(Note 1)

ID

70

Drain current

Pulse

(Note 1)

IDP

210

A

Drain power dissipation (Tc

= 25°C)

PD

150

W

Single pulse avalanche energy

(Note 2)

EAS

955

mJ

Avalanche current

IAR

70

A

Repetitive avalanche energy (Note 3)

EAR

15

mJ

Channel temperature

Tch

150

°C

Storage temperature range

Tstg

-55~150

°C

Thermal Characteristics

Characteristics

Symbol

Max

Unit

Thermal resistance, channel to case

Rth (ch-c)

0.833

°C/W

Note 1: Please use devices on condition that the channel temperature is below 150°C.

Note 2: VDD = 25 V, Tch = 25°C, L = 140 mH, RG = 25 W, IAR = 70 A

Note 3: Repetitive rating: Pulse width limited by maximum channel temperature

This transistor is an electrostatic sensitive device. Please handle with caution.

Unit: mm

JEDEC

―

JEITA

―

TOSHIBA

2-16H1A

Weight: 3.65 g (typ.)

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