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74V1G08STR Datasheet(PDF) 1 Page - STMicroelectronics |
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74V1G08STR Datasheet(HTML) 1 Page - STMicroelectronics |
1 / 9 page ![]() 1/9 July 2001 s HIGH SPEED: tPD = 3.8ns (TYP.) at VCC = 5V s LOW POWER DISSIPATION: ICC = 1µA(MAX.) at TA=25°C s HIGH NOISE IMMUNITY: VNIH = VNIL = 28% VCC (MIN.) s POWER DOWN PROTECTION ON INPUTS s SYMMETRICAL OUTPUT IMPEDANCE: |IOH| = IOL = 8mA (MIN) at VCC = 4.5V s BALANCED PROPAGATION DELAYS: tPLH ≅ tPHL s OPERATING VOLTAGE RANGE: VCC(OPR) = 2V to 5.5V s IMPROVED LATCH-UP IMMUNITY DESCRIPTION The 74V1G08 is an advanced high-speed CMOS SINGLE 2-INPUT AND GATE fabricated with sub-micron silicon gate and double-layer metal wiring C2MOS technology. The internal circuit is composed of 2 stages including buffer output, which provide high noise immunity and stable output. Power down protection is provided on all inputs and 0 to 7V can be accepted on inputs with no regard to the supply voltage. This device can be used to interface 5V to 3V. 74V1G08 SINGLE 2-INPUT AND GATE PIN CONNECTION AND IEC LOGIC SYMBOLS ORDER CODES PACKAGE T & R SOT23-5L 74V1G08STR SOT323-5L 74V1G08CTR SOT323-5L SOT23-5L |
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