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BUK9628-100A Datasheet(PDF) 1 Page - NXP Semiconductors |
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BUK9628-100A Datasheet(HTML) 1 Page - NXP Semiconductors |
1 / 9 page Philips Semiconductors Product specification TrenchMOS transistor BUK9528-100A Logic level FET BUK9628-100A GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode logic SYMBOL PARAMETER MAX. UNIT level field-effect power transistor in a plastic envelope available in V DS Drain-source voltage 100 V TO220AB and SOT404 . Using I D Drain current (DC) 49 A ’trench’ technology which features P tot Total power dissipation 166 W very low on-state resistance. It is T j Junction temperature 175 ˚C intended for use in automotive and R DS(ON) Drain-source on-state general purpose switching resistance V GS = 5 V 28 m Ω applications. V GS = 10 V 27 m Ω PINNING TO220AB & SOT404 PIN CONFIGURATION SYMBOL PIN DESCRIPTION 1 gate 2 drain 3 source tab/mb drain LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT V DS Drain-source voltage - - 100 V V DGR Drain-gate voltage R GS = 20 kΩ - 100 V ±V GS Gate-source voltage - - 10 V ±V GSM Non-repetitive gate-source voltage t p≤50µS - 15 V I D Drain current (DC) T mb = 25 ˚C - 49 A I D Drain current (DC) T mb = 100 ˚C - 34 A I DM Drain current (pulse peak value) T mb = 25 ˚C - 195 A P tot Total power dissipation T mb = 25 ˚C - 166 W T stg, Tj Storage & operating temperature - - 55 175 ˚C THERMAL RESISTANCES SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT R th j-mb Thermal resistance junction to - - 0.9 K/W mounting base R th j-a Thermal resistance junction to in free air 60 - K/W ambient(TO220AB) R th j-a Thermal resistance junction to Minimum footprint, FR4 50 - K/W ambient(SOT404) board 12 3 tab 13 mb 2 SOT404 TO220AB d g s March 2000 1 Rev 1.000 |
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