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NE678M04 Datasheet(PDF) 1 Page - NEC |
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NE678M04 Datasheet(HTML) 1 Page - NEC |
1 / 7 page NE678M04 MEDIUM POWER NPN SILICON HIGH FREQUENCY TRANSISTOR 2.05±0.1 1.25±0.1 +0.30 +0.01 -0.05 (leads 1, 3 and ,4) PIN CONNECTIONS 1. Emitter 2. Collector 3. Emitter 4. Base Notes: 1. Pulsed measurement, pulse width ≤ 350 µs, duty cycle ≤ 2 %. 2. Collector to Base capacitance measured by capacitance meter(automatic balance bridge method) when emitter pin is connected to the guard pin of capacitance meter. 3. Electronic Industrail Association of Japan. 4. DESCRIPTION The NE678M04 is fabricated using NEC's HFT3 wafer pro- cess. With a transition frequency of 12 GHz, the NE678M04 is usable in applications from 100 MHz to 3 GHz. The NE678M04 provides P1dB of 18 dBm, even with low voltage and low current, making this device an excellent choice for the driver stage for mobile or fixed wireless applications. The NE678M04 is housed in NEC's new low profile/flat lead style "M04" package • HIGH GAIN BANDWIDTH: fT = 12 GHz • HIGH OUTPUT POWER: P-1dB = 18 dBm at 1.8 GHz • HIGH LINEAR GAIN: GL = 13 dB at 1.8 GHz • NEW LOW PROFILE M04 PACKAGE: SOT-343 footprint, with a height of only 0.59 mm Flat lead style for better RF performance FEATURES PART NUMBER NE678M04 PACKAGE OUTLINE M04 EIAJ3 REGISTRATION NUMBER 2SC5753 SYMBOLS PARAMETERS AND CONDITIONS UNITS MIN TYP MAX ICBO Collector Cutoff Current at VCB = 5V, IE = 0 nA 100 IEBO Emitter Cutoff Current at VEB = 1 V, IC = 0 nA 100 hFE DC Current1 Gain at VCE = 3 V, IC = 30 mA 75 120 150 P1dB Output Power at 1 dB compression point at VCE = 2.8 V, ICQ = 10 mA, dBm 18.0 f = 1.8 GHz, Pin = 7 dBm GL Linear Gain at VCE = 2.8 V, IC = 10 mA, f = 1.8 GHz, Pin = -5 dBm dB 13.0 MAG Maximum Available Gain4 at VCE = 3 V, IC = 30 mA, f = 2 GHz dBm 13.5 |S21E|2 Insertion Power Gain at VCE = 3 V, IC = 30 mA, f = 2 GHz dB 8.0 10.5 ηc Collector Efficiency at VCE = 2.8 V, ICQ = 10 mA, f = 1.8 GHz, % 55 Pin = 7 dBm NF Noise Figure at VCE = 3 V, IC = 7 mA, f = 2 GHz, ZS = Zopt dB 1.7 2.5 fT Gain Bandwidth at VCE = 3 V, IC = 30 mA, f = 2 GHz GHz 12.0 Cre Reverse Transfer Capacitance2 at VCB = 3 V, IC = 0, f = 1 MHz pF 0.42 0.7 ELECTRICAL CHARACTERISTICS (TA = 25°C) California Eastern Laboratories MAG = |S21| |S12| K - 1 ). 2 (K ± |
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