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TPW65R080C Datasheet(PDF) 1 Page - Wuxi Unigroup Microelectronics Company |
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TPW65R080C Datasheet(HTML) 1 Page - Wuxi Unigroup Microelectronics Company |
1 / 8 page TPV65R080C, TPW65R080C V3.0 www.tsinghuaicwx.com Wuxi Unigroup Microelectronics Company FEATURES Very low FOM R DS(on)×Qg 100% avalanche tested RoHS compliant APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC) Device Marking and Package Information Device Package Marking TPV65R080C TO-3PN 65R080C TPW65R080C TO-247 65R080C Absolute Maximum Ratings T C = 25º C, unless otherwise noted Parameter Symbol Value Unit Drain-Source Voltage (V GS = 0V) V DSS 650 V Continuous Drain Current I D 47 A Pulsed Drain Current (note1) I DM 141 A Gate-Source Voltage V GSS ±30 V Single Pulse Avalanche Energy (note2) E AS 1120 mJ Avalanche Current (note1) I AR 8.7 A Repetitive Avalanche Energy (note1) E AR 1.76 mJ Power Dissipation (T C = 25ºC) P D 390 W Operating Junction and Storage Temperature Range T J, Tstg -55~+150 ºC Thermal Resistance Parameter Symbol Value Unit Thermal Resistance, Junction-to-Case R thJC 0.32 K/W Thermal Resistance, Junction-to-Ambient R thJA 62 650V Super-Junction Power MOSFET 1 |
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