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TPW65R080C Datasheet(PDF) 3 Page - Wuxi Unigroup Microelectronics Company |
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TPW65R080C Datasheet(HTML) 3 Page - Wuxi Unigroup Microelectronics Company |
3 / 8 page TPV65R080C, TPW65R080C V3.0 www.tsinghuaicwx.com Wuxi Unigroup Microelectronics Company 0 10 20 30 40 50 60 50 55 60 65 70 75 80 85 90 0 10 20 30 40 50 60 70 3 Typical Characteristics T J = 25º C, unless otherwise noted 0.2 0.4 0.6 0.8 1 1.2 T J = 25º C T J = 150º C 0 2 4 6 8 10 0 20 40 60 80 100 V DS = 120V V DS = 520V V GS = 0 f = 1MHz C iss C oss C rss Figure 1. Output Characteristics Figure 2. Transfer Characteristics 0 20 40 60 80 100 120 140 160 0 2 4 6 8 10 12 14 16 18 20 20V 10V 6V 5.5V 5V 4.5V 0 20 40 60 80 100 120 140 0 1 2 3 4 5 6 7 8 9 10 T J = 25º C T J = 150º C V DS, Drain-to-Source Voltage (V) V GS, Gate-to-Source Voltage (V) V GS = 10V T J = 25º C Figure 3. On-Resistance vs. Drain Current Figure 4. Capacitance 104 103 102 101 100 I D, Drain Current (A) V DS, Drain-to-Source Voltage (V) Figure 5. Gate Charge Figure 6. Body Diode Forward Voltage Q g, Total Gate Charge (nC) V SD, Source-to-Drain Voltage (V) 103 102 101 100 10-1 10-2 105 |
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