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THS4211DRBRG4 Datasheet(PDF) 2 Page - Texas Instruments

Part # THS4211DRBRG4
Description  LOW-DISTORTION HIGH-SPEED VOLTAGE FEEDBACK AMPLIFIER
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Manufacturer  TI [Texas Instruments]
Direct Link  http://www.ti.com
Logo TI - Texas Instruments

THS4211DRBRG4 Datasheet(HTML) 2 Page - Texas Instruments

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ABSOLUTE MAXIMUM RATINGS
PACKAGE DISSIPATION RATINGS
(1)
RECOMMENDED OPERATING CONDITIONS
THS4211
THS4215
SLOS400D – SEPTEMBER 2002 – REVISED NOVEMBER 2004
This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated
circuits be handled with appropriate precautions. Failure to observe proper handling and installation
procedures can cause damage.
ESD damage can range from subtle performance degradation to complete device failure. Precision
integrated circuits may be more susceptible to damage because very small parametric changes could
cause the device not to meet its published specifications.
over operating free-air temperature range (unless otherwise noted)(1)
UNIT
Supply voltage, VS
16.5 V
Input voltage, VI
±V
S
Output current, IO
100 mA
Continuous power dissipation
See Dissipation Rating Table
Maximum junction temperature, TJ(2)
150
°C
Maximum junction temperature, continuous operation, long term reliability TJ(3)
125
°C
Storage temperature range, Tstg
–65
°C to 150°C
Lead temperature 1,6 mm (1/16 inch) from case for 10 seconds
300
°C
HBM
4000 V
ESD ratings
CDM
1500 V
MM
200 V
(1)
Stresses above these ratings may cause permanent damage. Exposure to absolute maximum conditions for extended periods may
degrade device reliability. These are stress ratings only, and functional operation of the device at these or any other conditions beyond
those specified is not implied.
(2)
The absolute maximum ratings under any condition is limited by the constraints of the silicon process. Stresses above these ratings may
cause permanent damage. Exposure to absolute maximum conditions for extended periods may degrade device reliability. These are
stress ratings only, and functional operation of the device at these or any other conditions beyond those specified is not implied.
(3)
The maximum junction temperature for continuous operation is limited by package constraints. Operation above this temperature may
result in reduced reliability and/or lifetime of the device.
POWER RATING (3)
θ
JC
θ
JA
(2)
PACKAGE
(
°C/W)
(
°C/W)
TA≤ 25°C
TA= 85°C
D (8 pin)
38.3
97.5
1.02 W
410 mW
DGN (8 pin)(1)
4.7
58.4
1.71 W
685 mW
DGK (8 pin)
54.2
260
385 mW
154 mW
DRB (8 pin)
5
45.8
2.18 W
873 mW
(1)
The THS4211/5 may incorporate a PowerPAD™ on the underside of the chip. This acts as a heat sink and must be connected to a
thermally dissipative plane for proper power dissipation. Failure to do so may result in exceeding the maximum junction temperature
which could permanently damage the device. See TI technical briefs SLMA002 and SLMA004 for more information about utilizing the
PowerPAD thermally enhanced package.
(2)
This data was taken using the JEDEC standard High-K test PCB.
(3)
Power rating is determined with a junction temperature of 125
°C. This is the point where distortion starts to substantially increase.
Thermal management of the final PCB should strive to keep the junction temperature at or below 125
°C for best performance and long
term reliability.
MIN
MAX
UNIT
Dual supply
±2.5
±7.5
Supply voltage, (VS+ and VS–)
V
Single supply
5
15
Input common-mode voltage range
VS–+ 1.2
VS+ – 1.2
V
2


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