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IS62LV256L-20TI Datasheet(PDF) 6 Page - Integrated Silicon Solution, Inc

Part # IS62LV256L-20TI
Description  32K x 8 LOW VOLTAGE CMOS STATIC RAM
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Manufacturer  ISSI [Integrated Silicon Solution, Inc]
Direct Link  http://www.issi.com
Logo ISSI - Integrated Silicon Solution, Inc

IS62LV256L-20TI Datasheet(HTML) 6 Page - Integrated Silicon Solution, Inc

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IS62LV256L
6
Integrated Silicon Solution, Inc.
SR033-1A
04/27/99
ISSI®
AC WAVEFORMS
WRITE CYCLE NO. 1 (
WE
WE
WE
WE
WE Controlled)(1,2)
DATA-IN VALID
DATA UNDEFINED
tWC
tSCE
tAW
tHA
tPWE
tHZWE
HIGH-Z
tLZWE
tSA
tSD
tHD
ADDRESS
CE
WE
DOUT
DIN
WRITE CYCLE SWITCHING CHARACTERISTICS(1,3) (Over Operating Range)
-15 ns
-20 ns
-25 ns
Symbol
Parameter
Min.
Max.
Min.
Max.
Min.
Max.
Unit
tWC
Write Cycle Time
15
20
25
ns
tSCE
CE to Write End
10
13
15
ns
tAW
Address Setup Time to Write End
10
15
20
ns
tHA
Address Hold from Write End
0
0
0
ns
tSA
Address Setup Time
0
0
0
ns
tPWE(4)
WE Pulse Width
10
13
15
ns
tSD
Data Setup to Write End
8
10
12
ns
tHD
Data Hold from Write End
0
0
0
ns
tHZWE(2)
WE LOW to High-Z Output
7
8
10
ns
tLZWE(2)
WE HIGH to Low-Z Output
0
0
0
ns
Notes:
1. Test conditions assume signal transition times of 3 ns or less, timing reference levels of 1.5V, input pulse levels of 0 to 3.0V and
output loading specified in Figure 1.
2. Tested with the load in Figure 2. Transition is measured
±500 mV from steady-state voltage. Not 100% tested.
3. The internal write time is defined by the overlap of
CE LOW and WE LOW. All signals must be in valid states to initiate a Write,
but any one can go inactive to terminate the Write. The Data Input Setup and Hold timing are referenced to the rising or falling
edge of the signal that terminates the Write.
4. Tested with
OE HIGH.


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