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AP9435K Datasheet(PDF) 1 Page - Advanced Power Technology |
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AP9435K Datasheet(HTML) 1 Page - Advanced Power Technology |
1 / 4 page Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET ▼ ▼ ▼ ▼ Simple Drive Requirement BVDSS -30V ▼ ▼ ▼ ▼ Low On-resistance RDS(ON) 50mΩ ▼ ▼ ▼ ▼ Fast Switching ID -6A Description Absolute Maximum Ratings Symbol Units VDS V VGS V ID@TA=25℃ A ID@TA=70℃ A IDM A PD@TA=25℃ W W/℃ TSTG ℃ TJ ℃ Symbol Value Unit Rthj-amb Thermal Resistance Junction-ambient 3 Max. 45 ℃/W Data and specifications subject to change without notice Thermal Data Parameter Total Power Dissipation 2.7 -55 to 150 Operating Junction Temperature Range -55 to 150 Linear Derating Factor 0.02 Storage Temperature Range Continuous Drain Current 3 -4.8 Pulsed Drain Current 1 -20 Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current 3 200708031 AP9435K Rating -30 -6 ± 25 The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, low on-resistance and cost-effectiveness. G D S D D S G SOT-223 |
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