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LMH6704MA Datasheet(PDF) 3 Page - National Semiconductor (TI) |
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LMH6704MA Datasheet(HTML) 3 Page - National Semiconductor (TI) |
3 / 12 page Electrical Characteristics (Note 2) (Continued) T A = +25˚C , AV = +2, VS = ±5V, RL = 100 Ω; unless specified. Symbol Parameter Conditions Min (Note 6) Typ (Note 6) Max (Note 6) Units CMIR Common Mode Input Range V IO ≤ 15 mV ±1.9 ±2V PSRR Power Supply Rejection Ratio DC 48 47 52 dB V O Output Voltage Swing R L = ∞ ±3.3 ±3.18 ±3.5 V R L = 100 Ω ±3.2 ±3.12 ±3.5 I O Linear Output Current V OUT ≤ 80 mV ±55 ±90 mA I S Supply Current (Enabled) DIS = 2V, R L = ∞ 11.5 12.5 13.7 mA Supply Current (Disabled) DIS = 0.8V, R L = ∞ 0.25 0.9 0.925 R F &RG Internal R F and RG 375 465 563 Ω R OUT Closed Loop Output Resistance DC 0.05 Ω R IN+ Input Resistance 1M Ω C IN+ Input Capacitance 1pF Enable/Disable Performance (Disabled Low) T ON Enable Time 10 ns T OFF Disable Time 10 ns Output Glitch 50 mV PP V IH Enable Voltage DIS ≥ V IH 2.0 V V IL Disable Voltage DIS ≤ V IL 0.8 I IH Disable Input Bias Current, High DIS = V +, (Note 7) −1 ±50 µA I IL Disable Input Bias Current, Low DIS = 0V (Note 7) 0 −100 −350 µA I OZ Disabled Output Leakage Current A V = +1, VOUT = ±1.8V 0.2 ±25 ±50 µA Note 1: Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for which the device is intended to be functional, but specific performance is not guaranteed. For guaranteed specifications, see the Electrical Characteristics tables. Note 2: Electrical Table values apply only for factory testing conditions at the temperature indicated. Factory testing conditions result in very limited self-heating of the device such that TJ =TA. No guarantee of parametric performance is indicated in the electrical tables under conditions of internal self-heating where TJ > TA. Min/Max ratings are based on production testing unless otherwise specified. Note 3: The maximum output current (IOUT) is determined by device power dissipation limitations. Note 4: Human Body Model, applicable std. MIL-STD-883, Method 3015.7. Machine Model, applicable std. JESD22-A115-A (ESD MM std. of JEDEC) Field-Induced Charge-Device Model, applicable std. JESD22-C101-C (ESD FICDM std. of JEDEC). Note 5: Slew Rate is the average of the rising and falling edges. Note 6: Typical values represent the most likely parametric norm as determined at the time of characterization. Actual typical values may vary over time and will also depend on the application and configuration. The typical values are not tested and are not guaranteed on shipped production material. Note 7: Negative current implies current flowing out of the device. Note 8: The maximum power dissipation is a function of TJ(MAX), θJA. The maximum allowable power dissipation at any ambient temperature is PD =(TJ(MAX) –TA)/ θJA. All numbers apply for packages soldered directly onto a PC Board. www.national.com 3 |
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