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M54587P Datasheet(PDF) 2 Page - Mitsubishi Electric Semiconductor |
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M54587P Datasheet(HTML) 2 Page - Mitsubishi Electric Semiconductor |
2 / 5 page Mar.2002 MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M54587P/FP 8-UNIT 500mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE ns ns ton toff — — 120 2400 — — Symbol Unit Parameter Test conditions Limits min typ max SWITCHING CHARACTERISTICS (Unless otherwise noted, Ta = 25 °C) CL = 15pF (note 1) Turn-on time Turn-off time V V V 8 VCC VCC–3.6 5 — — 4 VCC–0.7 0 VCC VIH VIL Collector current Per channel RECOMMENDED OPERATING CONDITIONS (Unless otherwise noted, Ta = –20 ~ +75 °C) IC 0 0 — — mA 400 200 Parameter Limits Symbol Unit Supply voltage min typ max “H” input voltage “L” input voltage VCC = 5V, Duty Cycle P : no more than 34% FP : no more than 15% VCC = 5V, Duty Cycle P : no more than 6% FP : no more than 5% ABSOLUTE MAXIMUM RATINGS (Unless otherwise noted, Ta = –20 ~ +75 °C) Supply voltage Collector-emitter voltage Input voltage Collector current Clamping diode forward current Clamping diode reverse voltage Power dissipation Operating temperature Storage temperature V V V mA mA V W °C °C 10 –0.5 ~ +50 –0.5 ~ VCC 500 500 50 1.79/1.1 –20 ~ +75 –55 ~ +125 Ratings Symbol Parameter Conditions Unit Output, H Current per circuit output, L Ta = 25 °C, when mounted on board VCC VCEO VI IC IF VR Pd Topr Tstg ELECTRICAL CHARACTERISTICS (Unless otherwise noted, Ta = –40 ~ +85 °C) ✽ : The typical values are those measured under ambient temperature (Ta) of 25 °C. There is no guarantee that these values are obtained under any conditions. — 1.2 0.95 –290 1.4 0.1 1.9 3500 50 — — — — — — 2000 V (BR) CEO II VF IR ICC hFE V V µA V µA mA — — 2.4 1.6 –600 2.4 100 3 — Symbol Unit Parameter Test conditions Limits min typ max Collector-emitter breakdown voltage Input current Clamping diode forward volltage Clamping diode reverse current Supply current (AN only Input) DC amplification factor ICEO = 100 µA VI = VCC–3.6V VI = VCC–3.6V IF = 400mA VR = 50V VCC = 5V, VI = VCC–3.5V VCC = 5V, VCE = 4V, IC = 350mA, Ta = 25 °C VCE(sat) Collector-emitter saturation voltage ✽ IC = 400mA IC = 200mA |
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