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BUK7507-55B Datasheet(PDF) 9 Page - NXP Semiconductors |
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BUK7507-55B Datasheet(HTML) 9 Page - NXP Semiconductors |
9 / 15 page Philips Semiconductors BUK75/7607-55B TrenchMOS™ standard level FET Product data Rev. 01 — 15 May 2003 9 of 15 9397 750 11235 © Koninklijke Philips Electronics N.V. 2003. All rights reserved. VDS =25V Tj =25 °C; ID =25A Fig 13. Transfer characteristics: drain current as a function of gate-source voltage; typical values. Fig 14. Gate-source voltage as a function of gate charge; typical values. VGS =0V Fig 15. Source (diode forward) current as a function of source-drain (diode forward) voltage; typical values. 03nn61 0 25 50 75 100 024 6 8 VGS (V) ID (A) Tj = 175 °C Tj = 25 °C 03nn59 0 2 4 6 8 10 0 204060 QG (nC) VGS (V) VDD = 44 V VDD = 14 V 03nn58 0 25 50 75 100 0.0 0.5 1.0 1.5 VSD (V) ID (A) Tj = 175 °C Tj = 25 °C |
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