BUK9504-40A datasheet(5/15 Pages) PHILIPS

Part #	BUK9504-40A

Description	TrenchMOS logic level FET

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Manufacturer	PHILIPS [NXP Semiconductors]

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Philips Semiconductors

BUK95/96/9E04-40A

TrenchMOS™ logic level FET

Product data

Rev. 01 — 24 October 2001

5 of 15

9397 750 08649

8.

Characteristics

Table 5:

Characteristics

Tj =25 °C unless otherwise speciﬁed

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Static characteristics

V(BR)DSS

drain-source breakdown

voltage

ID = 0.25 mA; VGS =0V

Tj =25 °C40

-

V

Tj = −55 °C36

-

V

VGS(th)

gate-source threshold voltage ID = 1 mA; VDS =VGS;

Figure 9

Tj =25 °C

1

1.5

2

V

Tj = 175 °C

0.5

-

V

Tj = −55 °C

-

2.3

V

IDSS

drain-source leakage current

VDS = 40 V; VGS =0V

Tj =25 °C

-

0.05

10

µA

Tj = 175 °C

-

500

µA

IGSS

gate-source leakage current

VGS = ±10 V; VDS = 0 V

-

2

100

nA

RDSon

drain-source on-state

resistance

VGS =5V; ID =25A;

Figure 7 and 8

Tj =25 °C

-

3.5

4.4

m

Ω

Tj = 175 °C

-

8.3

m

Ω

VGS = 4.3 V; ID = 25 A

-

3.7

5.9

m

Ω

VGS =10V; ID = 25 A

-

2.9

4

m

Ω

Dynamic characteristics

Qg(tot)

total gate charge

VGS =5V;VDD =32V;

ID =25A; Figure 14

-

128

-

nC

Qgs

gate-to-source charge

-

13

-

nC

Qgd

gate-to-drain (Miller) charge

-

56

-

nC

Ciss

input capacitance

VGS =0V; VDS =25V;

f = 1 MHz; Figure 12

-

6200

8260

pF

Coss

output capacitance

-

1040

1250

pF

Crss

reverse transfer capacitance

-

680

940

pF

td(on)

turn-on delay time

VDD = 30 V; RL = 1.2 Ω;

VGS =5V; RG =10 Ω

-62

-

ns

tr

rise time

-

309

-

ns

td(off)

turn-off delay time

-

365

-

ns

tf

fall time

-

306

-

ns

Ld

internal drain inductance

from drain lead 6 mm from

package to centre of die

-

4.5

-

nH

from contact screw on

mounting base to centre of

die SOT78

-

3.5

-

nH

from upper edge of drain

mounting base to centre of

die SOT404 / SOT226

-

2.5

-

nH

Ls

internal source inductance

from source lead to source

bond pad

-

7.5

-

nH

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