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BUK9604-40A Datasheet(PDF) 6 Page - NXP Semiconductors |
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BUK9604-40A Datasheet(HTML) 6 Page - NXP Semiconductors |
6 / 15 page Philips Semiconductors BUK95/96/9E04-40A TrenchMOS™ logic level FET Product data Rev. 01 — 24 October 2001 6 of 15 9397 750 08649 © Koninklijke Philips Electronics N.V. 2001. All rights reserved. Source-drain diode VSD source-drain (diode forward) voltage IS = 40 A; VGS =0V; Figure 15 - 0.85 1.2 V trr reverse recovery time IS =20A; dIS/dt = −100 A/µs VGS = −10 V; VDS =30V - 260 - ns Qr recovered charge - 531 - nC Table 5: Characteristics…continued Tj =25 °C unless otherwise specified Symbol Parameter Conditions Min Typ Max Unit Tj =25 °C; tp = 300 µsTj =25 °C; ID =25A Fig 5. Output characteristics: drain current as a function of drain-source voltage; typical values. Fig 6. Drain-source on-state resistance as a function of gate-source voltage; typical values. Tj =25 °C Fig 7. Drain-source on-state resistance as a function of drain current; typical values. Fig 8. Normalized drain-source on-state resistance factor as a function of junction temperature. 03nd95 0 50 100 150 200 250 300 350 400 02 46 8 10 VDS (V) ID (A) 2.2 3 4 10 6 7 8 VGS = 5 V 03nd94 2 3 4 5 36 9 12 15 VGS (V) RDSon (m Ω) 03nd96 0 2 4 6 8 10 0 100 200 300 400 ID (A) RDSon (m Ω) VGS = 3 V 4 5 3.8 3.6 3.4 3.2 10 03aa27 0 0.4 0.8 1.2 1.6 2 -60 0 60 120 180 Tj ( oC) a a R DSon R DSon 25 C ° () ----------------------------- = |
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