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MTB010P04H8 Datasheet(PDF) 2 Page - Cystech Electonics Corp. |
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MTB010P04H8 Datasheet(HTML) 2 Page - Cystech Electonics Corp. |
2 / 11 page CYStech Electronics Corp. Spec. No. : C030H8 Issued Date : 2018.01.26 Revised Date : Page No. : 2/ 11 MTB010P04H8 CYStek Product Specification Absolute Maximum Ratings (Ta=25°C) Parameter Symbol 10s Steady State Unit Drain-Source Voltage VDS -40 Gate-Source Voltage VGS ±20 V Continuous Drain Current @ TC=25 °C, VGS=-12V (Note1) -49 Continuous Drain Current @ TC=100 °C, VGS=-12V (Note1) ID -31 Continuous Drain Current @ TA=25 °C, VGS=-12V (Note2) -15.5 -11 Continuous Drain Current @ TA=70 °C, VGS=-12V (Note2) IDSM -12.4 -8.8 Pulsed Drain Current (Note3) IDM -160 Avalanche Current @ L=0.1mH IAS -56 A Avalanche Energy @ L=1mH, ID=-26A, VDD=-10V (Note4) EAS 338 mJ TC=25℃ (Note1) 50 TC=100℃ (Note1) PD 20 TA=25°C (Note2) 5.0 2.5 Total Power Dissipation TA=70°C (Note2) PDSM 3.2 1.6 W Operating Junction and Storage Temperature Range Tj, Tstg -55~+150 °C Thermal Data Parameter Symbol Typical Maximum Unit Thermal Resistance, Junction-to-case Rth,j-c 2 2.5 t≤10s 18 25 Thermal Resistance, Junction-to-ambient (Note2) Steady State Rth,j-a 45 50 °C/W Note : 1 .The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. 2 . The value of RθJA is measured with the device mounted on 1 in²FR-4 board with 2 oz. copper, in a still air environment with TA=25°C. The power dissipation PDSM is based on RθJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user’s specific board design. 3 . Pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and low duty cycles to keep initial TJ=25°C. 4. 100% tested by conditions of L=100μH, IAS=-10A, VGS=-10V, VDD=-15V Characteristics (TC=25 °C, unless otherwise specified) Symbol Min. Typ. Max. Unit Test Conditions Static BVDSS -40 - - VGS=0V, ID=-250μA VGS(th) -1 - -2.5 V VDS = VGS, ID=-250μA GFS *1 - 24 - S VDS =-10V, ID=-20A IGSS - - ± 100 nA VGS=±20V, VDS=0V - - -1 VDS =-32V, VGS =0V IDSS - - -25 μA VDS =-32V, VGS =0V, Tj=85 °C - 8.3 12.5 VGS =-12V, ID=-15A RDS(ON) *1 - 12.6 18.0 mΩ VGS =-4.5V, ID=-10A |
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