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ASIMRAL1720-9 Datasheet(PDF) 1 Page - Advanced Semiconductor |
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ASIMRAL1720-9 Datasheet(HTML) 1 Page - Advanced Semiconductor |
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1 / 1 page A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 1/1 Specifications are subject to change without notice. CHARACTERISTICS TC = 25 °C NONE SYMBOL TEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS BVCES IC = 80 mA 42 V BVEBO IE = 1.0 mA 3.5 V ICBO VCB = 22 V 2.0 mA hFE VCE = 5.0 V IC = 400 mA 10 100 --- Cob VCB = 28 V f = 1.0 MHz 12 pF GPB ηηηηc VCE = 22 V Pout = 9.0 W f = 1.7 GHz & 2.0 GHz 6.5 40 dB % NPN SILICON RF POWER TRANSISTOR MRAL1720-9 DESCRIPTION: The ASI MRAL1720-9 is Designed for Class C, Common Base Wideband Large Signal Amplifier Applications up to 2.0 GHz. FEATURES: • Diffused Ballast Resistors. • Internal Matching Network • Omnigold™ Metalization System MAXIMUM RATINGS IC 4.0 A (CONT) VCES 42 V VEBO 3.5 V TJ -65 °C to +200 °C TSTG -65 °C to +150 °C θθθθ JC 4.5 °C/W PACKAGE STYLE 400 4L FLG |
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