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Q67041-A4712-A4 Datasheet(PDF) 2 Page - Infineon Technologies AG |
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Q67041-A4712-A4 Datasheet(HTML) 2 Page - Infineon Technologies AG |
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2 / 12 page  SGP20N60 SGB20N60, SGW20N60 2 Mar-00 Thermal Resistance Parameter Symbol Conditions Max. Value Unit Characteristic IGBT thermal resistance, junction – case R thJC 0.7 Thermal resistance, junction – ambient R thJA TO-247AC 40 K/W Electrical Characteristic, at Tj = 25 °C, unless otherwise specified Value Parameter Symbol Conditions min. Typ. max. Unit Static Characteristic Collector-emitter breakdown voltage V(BR)CES VGE=0V, IC=500 µA 600 - - Collector-emitter saturation voltage VCE(sat ) VGE = 15 V, IC =20A T j =2 5 °C T j =150 °C 1.7 - 2 2.4 2.4 2.9 Gate-emitter threshold voltage VGE(th) I C =700 µA,V CE = V GE 34 5 V Zero gate voltage collector current I CE S VCE =600V, V GE =0V T j =2 5 °C T j =150 °C - - - - 40 2500 µA Gate-emitter leakage current I GE S VCE =0V, VGE =20V - - 100 nA Transconductance g fs VCE =20V, IC =20A -14 - S Dynamic Characteristic Input capacitance C iss - 1100 1320 Output capacitance C os s - 107 128 Reverse transfer capacitance C rs s VCE =25V, VGE =0V, f =1M H z -63 76 pF Gate charge Q Gat e VCC =480V, I C =20A VGE =15V - 100 130 nC Internal emitter inductance measured 5mm (0.197 in.) from case L E TO - 2 4 7 A C Fe h l e r ! Ve r w ei sq u e ll e k onnt e ni c h t ge fun d e n we r d e n . - - 7 13 -nH Short circuit collector current 1) I C( SC ) VGE =15V,t SC ≤10µs VCC ≤ 600V, T j ≤ 150°C - 200 - A 1) Allowed number of short circuits: <1000; time between short circuits: >1s. |
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