SI4810BDY-T1 datasheet(4/5 Pages) VISHAY

Part #	SI4810BDY-T1

Description	N-Channel 30-V (D-S) MOSFET with Schottky Diode

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Si4810BDY

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Document Number: 72229

S-31063—Rev. A, 26-May-03

TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)

0.00

0.01

0.02

0.03

0.04

0.05

0.06

0

2468

10

ID = 9.0 A

Reverse Current (Schottky)

TJ - Temperature (_C)

Source-Drain Diode Forward Voltage

On-Resistance vs. Gate-to-Source Voltage

VSD - Source-to-Drain Voltage (V)

VGS - Gate-to-Source Voltage (V)

0.0

0.2

0.4

0.6

0.8

1.0

1.2

TJ = 150_C

TJ = 25_C

50

1

0.1

10

125

150

0.0001

1

30

0

255075

100

10 V

0.001

0.01

0.1

10

20 V

30 V

Safe Operating Area, Junction-to-Case

VDS - Drain-to-Source Voltage (V)

100

1

0.1

1

10

100

0.01

10

1 ms

0.1

Limited

by rDS(on)

TC = 25_C

Single Pulse

10 ms

100 ms

dc

10 s

1 s

0.01

0

1

50

20

30

10

1000

0.1

Single Pulse Power

Time (sec)

10

40

100

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SI4810BDY-T1 Datasheet(PDF) 4 Page - Vishay Siliconix

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