SI6447DQ datasheet(2/4 Pages) VISHAY

Part #	SI6447DQ

Description	P-Channel 20-V (D-S) MOSFET

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Manufacturer	VISHAY [Vishay Siliconix]

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2 / 4 page

Si6447DQ

Vishay Siliconix

www.vishay.com

S FaxBack 408-970-5600

2-2

Document Number: 70170

S-00872—Rev. G, 01-May-00

SPECIFICATIONS (TJ =25_C UNLESS OTHERWISE NOTED)

Parameter

Symbol

Test Condition

Min

Typ

Max

Unit

Static

Gate Threshold Voltage

VGS(th)

VDS = VGS, ID = –250 mA

–1.0

V

Gate-Body Leakage

IGSS

VDS = 0 V, VGS = "20 V

"100

nA

Zero Gate Voltage Drain Current

IDSS

VDS = –20 V, VGS = 0 V

–1

mA

Zero Gate Voltage Drain Current

IDSS

VDS = –10 V, VGS = 0 V, TJ = 70_C

–5

mA

On-State Drain Currenta

ID(on)

VDS = –5 V, VGS = –10 V

–14

A

On-State Drain Currenta

ID(on)

VDS = –5 V, VGS = –4.5 V

–2.5

A

Drain Source On State Resistancea

rDS( )

VGS = –10 V, ID = 3.2 A

0.060

0.09

W

Drain-Source On-State Resistancea

rDS(on)

VGS = –4.5 V, ID = 2.0 A

0.100

0.16

W

Forward Transconductancea

gfs

VDS = –15 V, ID = –3.2 A

4.0

S

Diode Forward Voltagea

VSD

IS = –1.7 A, VGS = 0 V

–0.9

–1.2

V

Dynamicb

Total Gate Charge

Qg

V10 V V

10 V I

3 2 A

15

25

C

Gate-Source Charge

Qgs

VDS = –10 V, VGS = –10 V, ID = –3.2 A

3

nC

Gate-Drain Charge

Qgd

3.5

Turn-On Delay Time

td(on)

V10 V R

10

W

13

40

Rise Time

tr

VDD = –10 V, RL = 10 W

I

1 A V

10 V R

6

W

13

25

Turn-Off Delay Time

td(off)

DD

,

L

ID ^ –1 A, VGEN = –10 V, RG = 6 W

30

50

ns

Fall Time

tf

13

20

Source-Drain Reverse Recovery Time

trr

IF = –1.7 A, di/dt = 100 A/ms

50

100

Notes

a.

Pulse test; pulse width

v 300 ms, duty cycle v 2%.

b.

Guaranteed by design, not subject to production testing.

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