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KTX711T Datasheet(PDF) 2 Page - KEC(Korea Electronics)

Part # KTX711T
Description  SILICON EPITAXIAL PLANAR TYPE DIODE
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Manufacturer  KEC [KEC(Korea Electronics)]
Direct Link  http://www.keccorp.com
Logo KEC - KEC(Korea Electronics)

KTX711T Datasheet(HTML) 2 Page - KEC(Korea Electronics)

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2011. 5. 23
2/4
KTX711T
Revision No : 2
ELECTRICAL CHARACTERISTICS (Ta=25
℃)
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Collector Cut-off Current
ICBO
VCB=80V, IE=0
-
-
-0.1
μA
Emitter Cut-off Current
IEBO
VEB=-5V, IC=0
-
-
-0.1
μA
Collector-Emitter Breakdown Voltage
V(BR)CEO
IC=-1mA, IB=0
-80
-
-
V
DC Current Gain
hFE(1)
VCE=-1V, IC=-10mA
100
-
-
hFE(2)
VCE=-1V, IC=-100mA
100
-
250
Collector-Emiotter Saturation Voltage
VCE(sat)
IC=-100mA, IB=-10mA
-
-
-0.25
V
Base-Emitter Voltage
VBE
VCE=-1V, IC=-100mA
-
-
-1.2
V
Transition Frequency
fT
VCE=-2V, IC=-10mA
100
-
-
MHZ
TRANSISTOR
ELECTRICAL CHARACTERISTICS (Ta=25
℃)
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Forward Voltage
VF(1)
IF=1mA
-
0.60
-
V
VF(2)
IF=10mA
-
0.72
-
VF(3)
IF=100mA
-
0.90
1.20
Reverse Current
IR
VR=80V
-
-
0.1
μA
Total Capacitance
CT
VR=0V, f=1MHz
-
0.9
3.0
pF
Reverse Recovery Time
trr
IF=10mA
-
1.6
4.0
nS


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