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IRHNJ3130 Datasheet(PDF) 1 Page - International Rectifier |
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IRHNJ3130 Datasheet(HTML) 1 Page - International Rectifier |
1 / 8 page Absolute Maximum Ratings Parameter Units ID @ VGS = 12V, TC = 25°C Continuous Drain Current 14.4 ID @ VGS = 12V, TC = 100°C Continuous Drain Current 9.1 IDM Pulsed Drain Current 58 PD @ TC = 25°C Max. Power Dissipation 75 W Linear Derating Factor 0.6 W/°C VGS Gate-to-Source Voltage ±20 V EAS Single Pulse Avalanche Energy 150 mJ IAR Avalanche Current 14.4 A EAR Repetitive Avalanche Energy 7.5 mJ dv/dt Peak Diode Recovery dv/dt 6.0 V/ns T J Operating Junction -55 to 150 TSTG Storage Temperature Range Pckg. Mounting Surface Temp. 300 (for 5s) Weight 1.0 (Typical) g Pre-Irradiation International Rectifier’s RAD-HardTM HEXFET® MOSFET technology provides high performance power MOSFETs for space applications. This technology has over a de- cade of proven performance and reliability in satellite applications. These devices have been characterized for both Total Dose and Single Event Effects (SEE). The combination of low RDS(on) and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control. These devices re- tain all of the well established advantages of MOSFETs such as voltage control, fast switching, ease of parallel- ing and temperature stability of electrical parameters. oC A RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-0.5) 2/4/00 www.irf.com 1 Features: n Single Event Effect (SEE) Hardened n Low RDS(on) n Low Total Gate Charge n Proton Tolerant n Simple Drive Requirements n Ease of Paralleling n Hermetically Sealed n Ceramic Package n Surface Mount n Light Weight For footnotes refer to the last page SMD-0.5 IRHNJ7130 100V, N-CHANNEL RAD-Hard ™ HEXFET ® MOSFET TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) ID IRHNJ7130 100K Rads (Si) 0.18 Ω 14.4A IRHNJ3130 300K Rads (Si) 0.18 Ω 14.4A IRHNJ4130 600K Rads (Si) 0.18 Ω 14.4A IRHNJ8130 1000K Rads (Si) 0.18 Ω 14.4A PD - 93820 |
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