IRHNJ7130

Pre-Irradiation

2

www.irf.com

For footnotes refer to the last page

Source-Drain Diode Ratings and Characteristics

Parameter

Min Typ Max Units

Test Conditions

IS

Continuous Source Current (Body Diode)

—

—

14.4

ISM

Pulse Source Current (Body Diode) Œ

——

58

VSD

Diode Forward Voltage

—

—

1.5

V

trr

Reverse Recovery Time

—

—

275

nS

Tj = 25°C, IF = 14.4A, di/dt ≥ 100A/µs

QRR Reverse Recovery Charge

—

—

2.5

µC

VDD ≤ 25V 

ton

Forward Turn-On Time

Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.

A

Thermal Resistance

Parameter

Min Typ Max

Units

Test Conditions

RthJC

Junction-to-Case

—

—

1.67

Parameter

Min

Typ Max Units

Test Conditions

BVDSS

Drain-to-Source Breakdown Voltage

100

—

—

V

VGS = 0V, ID = 1.0mA

∆BVDSS/∆TJ Temperature Coefficient of Breakdown

—

0.11

—

V/°C

Reference to 25°C, ID = 1.0mA

Voltage

RDS(on)

Static Drain-to-Source On-State

—

—

0.18

VGS = 12V, ID = 9.1A

Resistance

—

—

0.20

Ω

VGS = 12V, ID = 14.4A

VGS(th)

Gate Threshold Voltage

2.0

—

4.0

V

VDS = VGS, ID = 1.0mA

gfs

Forward Transconductance

2.5

—

—

S ( )VDS > 15V, IDS = 9.1A 

IDSS

Zero Gate Voltage Drain Current

—

—

25

VDS= 80V, VGS=0V

—

—

250

VDS = 80V,

VGS = 0V, TJ = 125°C

IGSS

Gate-to-Source Leakage Forward

—

—

100

VGS = 20V

IGSS

Gate-to-Source Leakage Reverse

—

—

-100

VGS = -20V

Qg

Total Gate Charge

—

—

50

VGS = 12V, ID = 14.4A

Qgs

Gate-to-Source Charge

—

—

10

nC

VDS = 50V

Qgd

Gate-to-Drain (‘Miller’) Charge

—

—

20

Turn-On Delay Time

—

—

35

VDD = 50V, ID = 14.4A,

tr

Rise Time

—

—

75

RG = 7.5Ω

Turn-Off Delay Time

—

—

70

tf

Fall Time

—

—

60

LS + LD

Total Inductance

—

4.0

—

Ciss

Input Capacitance

—

960

—

VGS = 0V, VDS = 25V

Coss

Output Capacitance

—

340

—

pF

f = 1.0MHz

Crss

Reverse Transfer Capacitance

—

85

—

nA



nH

ns

µA

Measured from the center of

drain pad to center of source pad

°C/W